Sintering and microstructural study of mullite prepared from kaolinite and reactive alumina: Effect of MgO and TiO 2

2020 ◽  
Vol 18 (1) ◽  
pp. 81-90
Author(s):  
Pallavi Suhasinee Behera ◽  
Sunipa Bhattacharyya
Keyword(s):  
Microstructural Study ◽  
Reactive Alumina

3D Microstructural Study of AlSi8Mg5 Alloy by FIB-Tomography

2010 ◽  
Vol 47 (9) ◽  
pp. 487-499 ◽  
Author(s):  
Fernando Lasagni ◽  
Andrés Lasagni ◽  
Christian Holzapfel ◽  
Michael Engstler ◽  
Frank Mücklich
Keyword(s):  
Microstructural Study

Microstructural study on MMA/1‐hexene copolymers made by mononuclear and dinuclear α‐diimine nickel (II) catalysts

2020 ◽  
Author(s):  
Mohadeseh Bagherabadi ◽  
Gholamhossein Zohuri ◽  
Navid Ramezanian ◽  
Mahsa Kimiaghalam ◽  
Mostafa Khoshsefat
Keyword(s):  
Microstructural Study

scholarly journals Comparative Microstructural study of Inconel 625 used to turbochargers.

2021 ◽  
Vol 27 (S1) ◽  
pp. 3156-3158
Author(s):  
Elsa Ordoñez-Casanova ◽  
Hortensica Reyes Blas ◽  
Hector A. Trejo-Mandujano
Keyword(s):  
Inconel 625 ◽  
Microstructural Study

scholarly journals Reactive alumina–LaPO4 composite as machinable bioceramics

2015 ◽  
Vol 38 (4) ◽  
pp. 975-983 ◽  
Author(s):  
ABHISHEK BADOLIA ◽  
RITWIK SARKAR ◽  
SUMIT KUMAR PAL
Keyword(s):  
Reactive Alumina

Microstructural study of GaAs epitaxial layers on Ge(100) substrates

1995 ◽  
Vol 10 (4) ◽  
pp. 843-852 ◽  
Author(s):  
N. Guelton ◽  
R.G. Saint-Jacques ◽  
G. Lalande ◽  
J-P. Dodelet
Keyword(s):  
Electron Microscopy ◽  
Surface Preparation ◽  
Growth Conditions ◽  
Vapor Transport ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Antiphase Boundaries ◽  
Microstructural Study ◽  
Mismatch Strain ◽  
Transmission Electron

GaAs layers grown by close-spaced vapor transport on (100) Ge substrates have been investigated as a function of the experimental growth conditions. The effects on the microstructure of the surface preparation, substrate misorientation, and annealing were studied using optical microscopy and transmission electron microscopy. Microtwins and threading dislocations are suppressed by oxide desorption before deposition. Single domain GaAs layers have been obtained using a 50 nm thick double domain buffer layer on an annealed Ge substrate misoriented 3°toward [011]. The mismatch strain is mainly accommodated by dissociated 60°dislocations. These misfit dislocations extend along the interface by the glide of the threading dislocations inherited from the substrate, but strong interaction with antiphase boundaries (APB's) prevents them from reaching the interface. These results are discussed and compared with previous reports of GaAs growth on Ge(100).

Microstructural study of the initiation and formation of immersion tin coating on copper

2002 ◽  
Vol 336 (1-2) ◽  
pp. 52-58 ◽  
Author(s):  
E Huttunen-Saarivirta ◽  
T Tiainen ◽  
T Lepistö
Keyword(s):  
Tin Coating ◽  
Microstructural Study ◽  
Immersion Tin
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