Low actuation voltage: RF MEMS series switch

2016 ◽  
Author(s):  
George Rahul Paul ◽  
Usha Kiran K.
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Series Switch

scholarly journals Laterally Movable Triple Electrodes Actuator toward Low Voltage and Fast Response RF-MEMS Switches

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 864 ◽  
Author(s):  
Yasuyuki Naito ◽  
Kunihiko Nakamura ◽  
Keisuke Uenishi
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Low Cost ◽  
Actuation Voltage ◽  
Fast Response ◽  
Point Of View ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Series Switch

A novel actuator toward a low voltage actuation and fast response in RF-MEMS (radio frequency micro-electro-mechanical systems) switches is reported in this paper. The switch is comprised of laterally movable triple electrodes, which are bistable by electrostatic forces applied for not only the on-state, but also the off-state. The bistable triple electrodes enable the implementation of capacitive series and shunt type switches on a single switch, which leads to high isolation in spite of the small gap between the electrodes on the series switch. These features of the actuator are effective for a low voltage and fast response actuation in both the on- and off-state. The structure was designed in RF from a mechanical point of view. The laterally movable electrodes were achieved using a simple, low-cost two-mask process with 2.0 µm thick sputtered aluminum. The characteristics of switching response time and actuation voltage were 5.0 µs and 9.0 V, respectively.

Design and modeling of a novel RF MEMS series switch with low actuation voltage

2015 ◽  
Vol 22 (12) ◽  
pp. 2921-2929 ◽  
Author(s):  
Khadeijeh Khodadady ◽  
Bahram Azizolla Ganji
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Series Switch

The Influence of Ambient Pressure on the Dynamic Response of RF MEMS Switches

2010 ◽  
Author(s):  
Avihay Ohana ◽  
Oren Aharon ◽  
Ronen Maimon ◽  
Boris Nepomnyashchy ◽  
Lior Kogut
Keyword(s):  
Rf Mems ◽  
Ambient Pressure ◽  
Actuation Voltage ◽  
Operating Conditions ◽  
Experimental Results ◽  
Release Time ◽  
Q Factor ◽  
Optimal Operating ◽  
Mems Switches ◽  
Rf Mems Switches

A study of the dynamic behavior of an RF MEMS switch is presented at different operating conditions. Experimental results for the actuation and release time and Q-factor as a function of the ambient pressure and actuation voltage are compared to theoretical predictions based on existing model. Optimal operating conditions (ambient pressure and actuation voltage) are determined based on two criterions: minimal actuation and release time and minimal oscillations upon switch release. In light of the experimental results optimal operating conditions determined to be 1.4Vpi at a pressure of a few torrs where actuation and release time are equal and short enough with no release oscillations. Three pressure regimes are identified with characteristic behavior of the Q-factor and actuation and release time in each regime. These behaviors have significant implications in many MEMS devices, especially RF MEMS switches.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

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