Effects of proximity of thermal shields on tri-band antenna RF performance

2013 ◽  
Author(s):  
Moh'd A. Hasan ◽  
Julie Huffman ◽  
W. Neill Kefauver
Keyword(s):  
Rf Performance ◽  
Thermal Shields

VERTICAL SCALING OF TYPE I InP HBT WITH FT > 500 GHZ

2004 ◽  
Vol 14 (03) ◽  
pp. 625-631 ◽  
Author(s):  
J. W. LAI ◽  
W. HAFEZ ◽  
M. FENG
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Impact Ionization ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Vertical Scaling ◽  
Physical Parameters ◽  
Type I ◽  
Peak Current Density ◽  
Rf Performance

We have fabricated the high-speed InP/InGaAs -based single heterojunction bipolar transistors (SHBTs) with current gain cutoff frequency, fT from 166GHz to over 500GHz by the approach of vertical scaling. Collector thickness is reduced from 3000Å to 750Å and the peak current density is increased up to 1300kA/cm2. In this paper, device rf performance has been compared with respect to materials with different vertical dimensions. The scaling limitation is also studied by analytical approach. The extracted physical parameters suggest that the parasitic emitter resistance is the major limit on further enhancing ultra-scaled HBT intrinsic speed due to the associated RECBC delay. The cut-off frequency of a 500Å collector SHBT has been measured and the results indicate a dramatic drop on fT, supporting the conclusion projected by model analysis. It is also commented that for deeply downscaled HBTs, impact ionization could be another degrading mechanism limits device bandwidth.

Improvement of SOI MOSFET RF Performance by Implant Optimization

2010 ◽  
Vol 20 (5) ◽  
pp. 271-273 ◽  
Author(s):  
C. L. Chen ◽  
J. M. Knecht ◽  
J. Kedzierski ◽  
C. K. Chen ◽  
P. M. Gouker ◽  
...  
Keyword(s):  
Soi Mosfet ◽  
Rf Performance

RF Performance of InAlN/GaN HFETs and MOSHFETs With $f_{T} \times L_{G}$ up to 21 $\hbox{GHz}\cdot \mu\hbox{m}$

2010 ◽  
Vol 31 (3) ◽  
pp. 180-182 ◽  
Author(s):  
P. Kordos ◽  
M. Mikulics ◽  
A. Fox ◽  
D. Gregusova ◽  
K. Cico ◽  
...  
Keyword(s):  
Rf Performance

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

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