Advanced Numerical Simulation Tool for Solar Cells - ASA5

2006 ◽  
Author(s):  
B. Pieters ◽  
J. Krc ◽  
M. Zeman
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Simulation Tool

scholarly journals Fatal Void Size Comparisons in Via-Below and Via-Above Cu Dual-Damascene Interconnects

2004 ◽  
Vol 812 ◽  
Author(s):  
Z. -S. Choi ◽  
C. L. Gan ◽  
F. Wei ◽  
C. V. Thompson ◽  
J. H. Lee ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Failure Mechanisms ◽  
Simulation Tool ◽  
Void Size ◽  
Dual Damascene ◽  
Preferential Nucleation ◽  
Failure Correlation ◽  
Void Volumes ◽  
Damascene Interconnects ◽  
Critical Void

AbstractThe median-times-to-failure (t50's) for straight dual-damascene via-terminated copper interconnect structures, tested under the same conditions, depend on whether the vias connect down to underlaying leads (metal 2, M2, or via-below structures) or connect up to overlaying leads (metal 1, M1, or via-above structures). Experimental results for a variety of line lengths, widths, and numbers of vias show higher t50's for M2 structures than for analogous M1 structures. It has been shown that despite this asymmetry in lifetimes, the electromigration drift velocity is the same for these two types of structures, suggesting that fatal void volumes are different in these two cases. A numerical simulation tool based on the Korhonen model has been developed and used to simulate the conditions for void growth and correlate fatal void sizes with lifetimes. These simulations suggest that the average fatal void size for M2 structures is more than twice the size of that of M1 structures. This result supports an earlier suggestion that preferential nucleation at the Cu/Si3N4 interface in both M1 and M2 structures leads to different fatal void sizes, because larger voids are required to span the line thickness in M2 structures while smaller voids below the base of vias can cause failures in M1 structures. However, it is also found that the fatal void sizes corresponding to the shortest-times-to-failure (STTF's) are similar for M1 and M2, suggesting that the voids that lead to the shortest lifetimes occur at or in the vias in both cases, where a void need only span the via to cause failure. Correlation of lifetimes and critical void volumes provides a useful tool for distinguishing failure mechanisms.

Numerical simulation of Ge solar cells using D-AMPS-1D code

2012 ◽  
Vol 407 (16) ◽  
pp. 3282-3284 ◽  
Author(s):  
Marcela Barrera ◽  
Francisco Rubinelli ◽  
Ignacio Rey-Stolle ◽  
Juan Plá
Keyword(s):  
Numerical Simulation ◽  
Solar Cells

scholarly journals Three-Method Hybrid Numerical Simulation for Surface-Plasmon-Enhanced GaInN-Based Light-Emitting Diodes with Metal-Embedded Nanostructures

2021 ◽  
Vol 9 ◽  
Author(s):  
Ryoya Hiramatsu ◽  
Ryo Takahashi ◽  
Ryoto Fujiki ◽  
Keisuke Hozo ◽  
Kanato Sawai ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Light Emitting Diodes ◽  
Simulation Tool ◽  
Wave Analysis ◽  
Light Emitting ◽  
Rigorous Coupled Wave Analysis ◽  
Physical Background ◽  
Simulation Results ◽  
Rigorous Coupled Wave ◽  
Difference Time

In this paper, a hybrid numerical simulation tool is introduced and performed for GaInN-based light-emitting diodes (LEDs) with metal-embedded nanostructure to theoretically predict external quantum efficiency (EQE), which composed of finite-difference time-domain, rigorous coupled wave analysis, and ray tracing. The advantage is that the proposed method provides results supported by sufficient physical background within a reasonable calculation time. From the simulation results, the EQE of LED with Ag-nanoparticles embedded nanostructure is expected to be enhanced by as high as ∼1.6 times the conventional LED device in theory.

scholarly journals Numerical Simulation of a Textured and Untextured Photovoltaic Solar Cell: Comparative study

2021 ◽  
Vol 03 (01) ◽  
pp. 104-114
Author(s):  
Karim Salim ◽  
◽  
M.N Amroun ◽  
K Sahraoui ◽  
W Azzoui ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Solar Cells ◽  
Solar Cell ◽  
Comparative Study ◽  
Silicon Solar Cell ◽  
The Other ◽  
Surface Parameters ◽  
Cell Efficiency ◽  
Photovoltaic Solar Cell ◽  
A Cell

Increasing the efficiency of solar cells relies on the surface of the solar cell. In this work, we simulated a textured silicon solar cell. This simulation allowed us to predict the values of the surface parameters such as the angle and depth between the pyramids for an optimal photovoltaic conversion where we found the Icc: 1.783 (A) and Vco: 0.551 (V) with a cell efficiency of about 13.56%. On the other hand, we performed another simulation of a non-textured solar cell to compare our values and found Icc: 1.623 (A) and Vco: 0.556 (V) with an efficiency of about 12.76%.

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