Fabrication of nc-Si:H n-i-p single-junction solar cells using VHF PECVD at a deposition rate of 10 Å/s

B(Ch3)3 as P Layer Doping Gas

MRS Proceedings ◽

10.1557/proc-192-523 ◽

1990 ◽

Vol 192 ◽

Cited By ~ 1

Author(s):

D. S. Shen ◽

H. Chatham ◽

R. E. I. Schropp

Keyword(s):

Thermal Stability ◽

Solar Cells ◽

Deposition Rate ◽

High Deposition Rate ◽

Critical Part ◽

Single Junction ◽

Boron Doped ◽

Conversion Efficiencies

ABSTRACTThe boron doped p-layer is a critical part of a-Si:H solar cells. Trimethylboron (B(CH3)3) has been suggested to be a better doping gas and has a better thermal stability than B2H6. Single junction a-Si:H solar cells and a-Si:H/a-Si:H tandem cells with the p-layers deposited using B(CH3)3 have resulted in conversion efficiencies of 11.4% and 10.4%, respectively. Using these new p+-layers, we also reached 10% efficiencies in single junction a-Si:H solar cells with the i-layer deposited at a high deposition rate of ∼ 2 nm/s from either SiH4 or Si2H6 as a source gas.

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He-Dilution to Increase Deposition Rate and Feedstock Utilization During the Growth of a-Si:H and a-SiGe:H Alloys

MRS Proceedings ◽

10.1557/proc-557-151 ◽

1999 ◽

Vol 557 ◽

Author(s):

A. R. Middya ◽

G. Wood ◽

G. H. Lin ◽

D. E. Carlson

Keyword(s):

Solar Cells ◽

Deposition Rate ◽

State Of The Art ◽

Deposition Rates ◽

Single Junction ◽

Hydrogen Dilution ◽

Helium Dilution ◽

Fabrication Time

AbstractWe report on the development of helium diluted a-Si:H and a-SiGe:H solar cells with higher deposition rates and better feedstock utilization than devices made with hydrogen dilution. Both the initial and the stabilized efficiencies of the He-diluted single-junction aSi:H and a-SiGe:H cells are similar to those of hydrogen-diluted cells with state-of-the-art intrinsic materials. The total fabrication time for tandem cells has been reduced by 17% by using helium dilution without loss in initial and stabilized efficiency.

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Preparation of Triple-Junction A-Si:H NIP Based Solar Cells at Deposition Rates of 10 Å/s using a Very High Frequency Technique

MRS Proceedings ◽

10.1557/proc-557-133 ◽

1999 ◽

Vol 557 ◽

Cited By ~ 1

Author(s):

S.J. Jones ◽

X. Deng ◽

T. Liu ◽

M. Izu

Keyword(s):

Solar Cells ◽

Deposition Rate ◽

Triple Junction ◽

High Frequency ◽

Rf Plasma ◽

Very High Frequency ◽

Deposition Rates ◽

Single Junction ◽

Layer Deposition ◽

Very High

AbstractIn an effort to find an alternative deposition method to the standard low deposition rate 13.56 M-z PECVD technique, the feasibility of using a 70 MiHz rf plasma frequency to prepare a-Si:H based i-layer materials at high rates for nip based triple-junction solar cells has been tested. As a prelude to multi-junction cell fabrication, the deposition conditions used to make single-junction a-Si:H and a-SiGe:H cells using this Very High Frequency (VHF) method have been varied to optimize the material quality and the cell efficiencies. It was found that the efficiencies and the light stability for both a-Si:H and a-SiGe:H single-junction cells remain relatively constant as the i-layer deposition rate is varied from 1 to 10 Å/s. Also these stable efficiencies are similar to those for cells made at low deposition rates (1 Å/s) using the standard 13.56 MHz PECVD technique and the same deposition equipment. Using the knowledge obtained in the fabrication of the single-junction devices, a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells have been fabricated with all of the i-layers prepared using the VHF technique and deposition rates near 10 Å/s. Thin doped layers for these devices were prepared using the standard 13.56 MIHz rf frequency and deposition rates near 1 Å/s. Pre-light soaked efficiencies of greater than 10% have been obtained for these cells prepared at the high rates. In addition, after 600 hrs. of light soaking under white light conditions, the cell efficiencies degraded by only 10-13%, values similar to the degree of degradation for high efficiency triple-junction cells made by the standard 13.56 MiHz method using i-layer deposition rates near 1 Å/s. Thus, use of this VHF method in the production of large area a-Si:H based multi-junction solar modules will allow for higher i-layer deposition rates, higher module throughput and reduced module cost.

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Preparation of a-Si:H and a-SiGe:H I-Layers for Nip Solar Cells at High Deposition Rates Using a Very High Frequency Technique

MRS Proceedings ◽

10.1557/proc-507-113 ◽

1998 ◽

Vol 507 ◽

Cited By ~ 14

Author(s):

S.J. Jones ◽

X. Deng ◽

T. Liu ◽

M. Izu

Keyword(s):

Solar Cells ◽

Deposition Rate ◽

High Frequency ◽

High Efficiency ◽

High Deposition Rate ◽

Very High Frequency ◽

Deposition Rates ◽

Single Junction ◽

Layer Deposition ◽

Very High

ABSTRACTThe 70 MHz Plasma Enhance Chemical Vapor Deposition (PECVD) technique has been tested as a high deposition rate (10 A/s) process for the fabrication of a-Si:H and a-SiGe:H alloy ilayers for high efficiency nip solar cells. As a prelude to multi-junction cell fabrication, the deposition conditions used to make single-junction a-Si:H and a-SiGe:H cells using this Very High Frequency (VHF) method have been varied to optimize the material quality and the cell efficiencies. It was found that the efficiencies and the light stability for a-Si:H single-junction cells can be made to remain relatively constant as the i-layer deposition rate is varied from 1 to 10 Å/s. Also these stable efficiencies are similar to those for cells made at low deposition rates (1 Å/s) using the standard 13.56 MHz PECVD technique. For the a-SiGe:H cells of the same i-layer thickness, use of the VHF technique leads to cells with higher currents and an ability to more easily current match triple-junction cells prepared at high deposition rates which should lead to higher multi-junction efficiencies. Thus, use of this VHF method in the production of large area a- Si:H based multi-junction solar modules will allow for higher i-layer deposition rates, higher manufacturing throughput and reduced module cost.

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Vapor Phase Deposited Single Junction and Tandem Perovskite Solar Cells.

10.29363/nanoge.hopv.2019.019 ◽

2019 ◽

Author(s):

Henk Bolink

Keyword(s):

Solar Cells ◽

Vapor Phase ◽

Perovskite Solar Cells ◽

Single Junction

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Fully Evaporated High Efficiency Single Junction and Tandem Perovskite based Solar Cells.

10.29363/nanoge.hopv.2018.060 ◽

2018 ◽

Author(s):

Henk Bolink ◽

Lidon Gil-Escrig ◽

Pablo P. Boix ◽

Cristina Momblona ◽

Jorge Avila ◽

...

Keyword(s):

Solar Cells ◽

High Efficiency ◽

Single Junction

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Radiative sky cooling of solar cells: fundamental modelling and cooling potential of single-junction devices

Sustainable Energy & Fuels ◽

10.1039/d0se01536a ◽

2021 ◽

Vol 5 (7) ◽

pp. 2085-2096

Author(s):

Jérémy Dumoulin ◽

Emmanuel Drouard ◽

Mohamed Amara

Keyword(s):

Solar Cells ◽

Thermal Properties ◽

Potential Benefit ◽

Single Junction ◽

Modelling Framework

A fundamental modelling framework of solar cells is presented in order to quantify the potential benefit of enhanced radiative sky cooling for different single-junction technologies, according to their basic electrical and thermal properties.

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The recent progress of metal-halide perovskite-based tandem solar cells

Materials Chemistry Frontiers ◽

10.1039/d0qm01085e ◽

2021 ◽

Author(s):

Cenqi Yan ◽

Jiaming Huang ◽

Dong Dong Li ◽

Gang Li

Keyword(s):

Solar Cells ◽

Recent Progress ◽

Metal Halide ◽

Tandem Solar Cells ◽

Single Junction ◽

Hybrid Perovskite ◽

Metal Halide Perovskite ◽

Halide Perovskite

Tandem solar cells (TSCs) are devices made of multiple junctions with complementary absorption ranges, which aim to overcome the Shockley–Queisser limit of single-junction solar cells. Currently, metal-halide hybrid perovskite solar...

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