Series Resistance Modelling of Industrial Screen-Printed Monocrystalline Silicon Solar Cells and Modules Including the Effect of Spot Soldering

2006 ◽  
Author(s):  
L.J. Caballero ◽  
P. Sanchez-Friera ◽  
B. Lalaguna ◽  
J. Alonso ◽  
M.A. Vazquez
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Screen Printed

Series resistance characterization of industrial silicon solar cells with screen-printed contacts using hotmelt paste

2007 ◽  
Vol 15 (6) ◽  
pp. 493-505 ◽  
Author(s):  
A. Mette ◽  
D. Pysch ◽  
G. Emanuel ◽  
D. Erath ◽  
R. Preu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Screen Printed

scholarly journals Photovoltaic and Charge Trapping Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Molybdenum Oxides as Hole-Selective Layers by H2/Ar Plasma Pretreatment

2020 ◽  
Vol 2020 ◽  
pp. 1-5
Author(s):  
Chin-Lung Cheng ◽  
Chi-Chung Liu ◽  
Chih-Chieh Hsu
Keyword(s):  
Solar Cells ◽  
Charge Trapping ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Molybdenum Oxides ◽  
Time Flow ◽  
Plasma Pretreatment ◽  
Ar Plasma ◽  
Photovoltaic Characteristics ◽  
Screen Printed

Photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPSSCs) with molybdenum oxide (MoO x ) as hole-selective layers (HSLs) were demonstrated. A H2/Ar plasma pretreatment (PPT) was incorporated into a MoO x /p-Si(100) interface, which shows the expected quality in terms of passivation. Moreover, the charge trapping characteristics of the MoO x /p-Si(100) interface were presented. The PPT parameters, including power, treated time, flow ratio of H2/Ar, and temperature, were investigated. The experimental results indicate that the Si-H bond with a relatively high intensity was demonstrated for the H2/Ar PPT. The achievement of a conversion efficiency (CE) improvement of more than 1.2% absolute from 18.3% to 19.5% for SPSSCs with H2/Ar PPT was explored. The promoted mechanism was attributed to the reduction of the interface trap density caused by the large number of Si-H bonds at the silicon substrate and MoO x interface.

scholarly journals Photovoltaic and Physical Characteristics of Screen-Printed Monocrystalline Silicon Solar Cells with Laser Doping and Electroplated Copper

2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chi-Chung Liu ◽  
Chun-Tin Yeh
Keyword(s):  
Solar Cells ◽  
Seed Layer ◽  
Contact Layer ◽  
Physical Characteristics ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Focus Laser ◽  
Laser Doping ◽  
Electroplated Copper ◽  
Screen Printed

Photovoltaic and physical characteristics of screen-printed monocrystalline silicon solar cells (SPMSCs) were presented with electroplated copper (EPC) as the rear contact. The boron back surface field (B-BSF) formed by spin-on doping and laser doping (LD) was prepared as a seed layer for the EPC. The LD parameters, including the laser focus, laser power, laser speed, and laser line pitch, were investigated. Moreover, the effects of KOH etching on the surface properties after the LD process were explored. Furthermore, to enhance the adhesion between the B-BSF seed layer and EPC contact layer, a laser pinhole process was proposed. Finally, the EPC processes with various electroplating times were addressed. The results revealed that the mechanism of enhancements could be attributed to a continuous B-BSF seed layer and a reduction of series resistance, as well as an increase of open-circuit voltage and adhesion between the B-BSF seed layer and EPC contact layer.

scholarly journals A New Six-Parameter Model Based on Chebyshev Polynomials for Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-13 ◽  
Author(s):  
Shu-xian Lun ◽  
Jing-shu Sang ◽  
Ting-ting Guo
Keyword(s):  
Solar Cells ◽  
Temperature Dependence ◽  
Chebyshev Polynomials ◽  
Polycrystalline Silicon ◽  
Series Resistance ◽  
Monocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Silicon Thin Film ◽  
Current Voltage ◽  
The Relationship

This paper presents a new current-voltage (I-V) model for solar cells. It has been proved that series resistance of a solar cell is related to temperature. However, the existing five-parameter model ignores the temperature dependence of series resistance and then only accurately predicts the performance of monocrystalline silicon solar cells. Therefore, this paper uses Chebyshev polynomials to describe the relationship between series resistance and temperature. This makes a new parameter called temperature coefficient for series resistance introduced into the single-diode model. Then, a new six-parameter model for solar cells is established in this paper. This new model can improve the accuracy of the traditional single-diode model and reflect the temperature dependence of series resistance. To validate the accuracy of the six-parameter model in this paper, five kinds of silicon solar cells with different technology types, that is, monocrystalline silicon, polycrystalline silicon, thin film silicon, and tripe-junction amorphous silicon, are tested at different irradiance and temperature conditions. Experiment results show that the six-parameter model proposed in this paper is anI-Vmodel with moderate computational complexity and high precision.

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