Influence of the Thermal Treatment During the Saw Damage Etching Process on the Mechanical Stability of Multicrystalline Silicon Wafers

2006 ◽  
Author(s):  
D. Borchert ◽  
S. Riepe ◽  
R. Kubler ◽  
J. Beinert ◽  
T. Kraft ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Mechanical Stability ◽  
Silicon Wafers ◽  
Etching Process ◽  
Multicrystalline Silicon

scholarly journals Delineation of Crystalline Extended Defects on Multicrystalline Silicon Wafers

2007 ◽  
Vol 2007 ◽  
pp. 1-4 ◽  
Author(s):  
Mohamed Fathi
Keyword(s):  
Grain Boundaries ◽  
Process Parameters ◽  
Silicon Wafers ◽  
Etching Process ◽  
Multicrystalline Silicon ◽  
Extended Defects ◽  
Dislocation Densities ◽  
Increased Sensitivity ◽  
Small Grains ◽  
Crystalline Defect

We have selected Secco and Yang etch solutions for the crystalline defect delineation on multicrystalline silicon (mc-Si) wafers. Following experimentations and optimization of Yang and Secco etching process parameters, we have successfully revealed crystalline extended defects on mc-Si surfaces. A specific delineation process with successive application of Yang and Secco agent on the same sample has proved the increased sensitivity of Secco etch to crystalline extended defects in mc-Si materials. The exploration of delineated mc-Si surfaces indicated that strong dislocation densities are localized mainly close to the grain boundaries and on the level of small grains in size (below 1 mm). Locally, we have observed the formation of several parallel dislocation lines, perpendicular to the grain boundaries. The overlapping of several dislocations lines has revealed particular forms for etched pits of dislocations.

Pts-Oi Complex Formation in Platinum Diffused Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Wilfried Vervisch ◽  
Laurent Ventura ◽  
Bernard Pichaud ◽  
Gérard Ducreux ◽  
André Lhorte
Keyword(s):  
Thermal Treatment ◽  
Complex Formation ◽  
Cooling Rate ◽  
Point Defects ◽  
Diffusion Processes ◽  
Silicon Wafers ◽  
Doping Behaviour ◽  
Simulation Results ◽  
Dopant Atoms ◽  
P Type

AbstractWhen platinum is diffused at temperatures higher than 900°C in Cz or FZ low doped n-type silicon samples, which are then cooled slowly in the range [1-10]°C/min, a p-type doping leading to the formation of a pn junction can be observed by spreading resistance measurement. The lower the cooling rate, the deeper the junction is. This junction disappears after a second thermal treatment finishing with a quenching step. A platinum related complex formation is considered to explain this reversible doping behaviour. Different possible interactions between platinum and other impurities such as dopant atoms, intrinsic point defects, and common residual impurities (C, Oi, transition metallic atoms) are studied here. Experimental results from Pt diffusion processes in different qualities of silicon wafers, and simulation results, lead to the conclusion that the platinum related p-type doping effect is due to the formation of a Pts-Oi complex.

KOH-ETCH Related Defects on Processed Silicon Wafers

1992 ◽  
Vol 259 ◽  
Author(s):  
Laurent E. Kassel
Keyword(s):  
Thermal Treatment ◽  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Processing Steps ◽  
Crystallographic Orientations

ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.

scholarly journals Enhanced performance in the deteriorated area of multicrystalline silicon wafers by internal gettering

2013 ◽  
Vol 23 (1) ◽  
pp. 30-36 ◽  
Author(s):  
Yacine Boulfrad ◽  
Antti Haarahiltunen ◽  
Hele Savin ◽  
Eivind J. Øvrelid ◽  
Lars Arnberg
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon

scholarly journals About the relevance of defect features in as-cut multicrystalline silicon wafers on solar cell performance

2018 ◽  
Author(s):  
Aditya Kovvali ◽  
Matthias Demant ◽  
Theresa Trötschler ◽  
Jonas Haunschild ◽  
Stefan Rein
Keyword(s):  
Solar Cell ◽  
Silicon Wafers ◽  
Cell Performance ◽  
Multicrystalline Silicon ◽  
Solar Cell Performance

scholarly journals INFRARED LBIC SCAN MAPS APPLIED TO ALUMINIUM GETTERED MULTICRYSTALLINE SILICON WAFERS

1991 ◽  
Vol 01 (C6) ◽  
pp. C6-237-C6-238 ◽  
Author(s):  
J. Y. NATOLI ◽  
M. PASQUINELLI ◽  
F. FLORET ◽  
S. MARTINUZZI
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon

Texture for Diamond Wire Sawn Multicrystalline Silicon Wafers by a Vapor Etching Method

2015 ◽  
Vol 44 (1) ◽  
pp. 116002 ◽  
Author(s):  
刘小梅 LIU Xiao-mei ◽  
陈文浩 CHEN Wen-hao ◽  
李妙 LI Miao ◽  
周浪 ZHOU Lang
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Diamond Wire ◽  
Etching Method

Vapor Etching Method for Diamond Wire Sawn Multicrystalline Silicon Wafers

2014 ◽  
Vol 43 (11) ◽  
pp. 1116006
Author(s):  
刘小梅 LIU Xiao-mei ◽  
陈文浩 CHEN Wen-hao ◽  
李妙 LI Miao ◽  
周浪 ZHOU Lang
Keyword(s):  
Silicon Wafers ◽  
Multicrystalline Silicon ◽  
Diamond Wire ◽  
Etching Method
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