RF Extrinsic Resistance Extraction Considering Neutral-Body Effect for Partially-Depleted SOI MOSFETs

2006 ◽  
Author(s):  
Sheng-chun Wang ◽  
Pin Su ◽  
Kun-ming Chen ◽  
Chien-ting Lin ◽  
Victor Liang ◽  
...  
Keyword(s):  
Body Effect ◽  
Extrinsic Resistance

Body Effect Measurement in DRAM Cell Transistor Using Memory Test System

2016 ◽  
Author(s):  
Ilwoo Jung ◽  
Byoungdeok Choi ◽  
Bonggu Sung ◽  
Daejung Kim ◽  
Ilgweon Kim ◽  
...  
Keyword(s):  
Conventional Method ◽  
Cell Body ◽  
Test System ◽  
Memory Test ◽  
Effect Measurement ◽  
Nondestructive Measurement ◽  
Individual Values ◽  
Body Effect ◽  
Sample Damage ◽  
Viable Method

Abstract Body effect is the key characteristic of DRAM cell transistor. Conventional method uses a TEG structure for body effect measurement. But this measurement is not accurate, because TEG structure has only several transistors and it is located outside of the DRAM die. This paper suggests a viable method for measuring DRAM cell transistor body effect. It uses a memory test system for fast, massive, nondestructive measurement. Newly developed method can measure 100,000 DRAM cell body effects in two minute, without sample damage. The test gives one median value and 100,000 individual values of body effects. Median value of measured body effects is equal to the TEG body effect. An individual DRAM cell body effect has a correlation with the fin height.

Transport through several four-quantum-dot topological structures

2021 ◽  
pp. 2150393
Author(s):  
Qingshuang Zhi ◽  
Kongfa Chen ◽  
Zelong He
Keyword(s):  
Quantum Dot ◽  
Coupling Strength ◽  
Bound States ◽  
Resonance Peak ◽  
Coulomb Interactions ◽  
Many Body ◽  
Body Effect ◽  
Topological Structures ◽  
Resonance Band ◽  
Interdot Coupling

In this paper, several four-quantum-dot topological structures are designed. The influence of the interdot coupling strength and intradot Coulomb interactions on the conductance is discussed. The location of the anti-resonance band can be manipulated by tuning the interdot coupling strength, which suggests a physical scheme of an effective quantum switch. The Fano anti-resonance peak may evolve into a resonance peak. For the particular value of the interdot coupling strength, two Fano anti-resonances collapse and bound states in the continuum are formed. Moreover, many-body effect makes the number of anti-resonance bands increase. This study provides a theoretical basis for the design of quantum computing devices.

scholarly journals Investigation of the significance of the 'body effect' on sensitivity to metallic objects in a walk-through metal detector

2013 ◽  
Vol 450 ◽  
pp. 012037 ◽  
Author(s):  
L A Marsh ◽  
J Makkonen ◽  
J Vihonen ◽  
A Visa ◽  
A Järvi ◽  
...  
Keyword(s):  
The Body ◽  
Metal Detector ◽  
Body Effect
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