Threshold voltage and DIBL variability modeling for SRAM and analog MOSFETs

2012 ◽  
Author(s):  
Nattapol Damrongplasit ◽  
Luis Zamudio ◽  
Sriram Balasubramanian
Keyword(s):  
Threshold Voltage ◽  
Variability Modeling

Threshold Voltage and DIBL Variability Modeling Based on Forward and Reverse Measurements for SRAM and Analog MOSFETs

2015 ◽  
Vol 62 (4) ◽  
pp. 1119-1126 ◽  
Author(s):  
Nattapol Damrongplasit ◽  
Luis Zamudio ◽  
Tsu-Jae King Liu ◽  
Sriram Balasubramanian
Keyword(s):  
Threshold Voltage ◽  
Variability Modeling

Improvement in Computational Accuracy of Output Transition Time Variation Considering Threshold Voltage Variations

2009 ◽  
Vol E92-A (4) ◽  
pp. 990-997
Author(s):  
Takaaki OKUMURA ◽  
Atsushi KUROKAWA ◽  
Hiroo MASUDA ◽  
Toshiki KANAMOTO ◽  
Masanori HASHIMOTO ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Variation ◽  
Transition Time ◽  
Computational Accuracy

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
High Current ◽  
Enhancement Mode ◽  
Recessed Gate
Sign in / Sign up

Export Citation Format

Share Document