An on-chip voltage regulator with improved load regulation and light load power efficiency

Author(s):  
R.G. Raghavendra ◽  
P. Mandal
Author(s):  
Hatim Ameziane ◽  
Kamal Zared ◽  
Hicham Akhamal ◽  
Hassan Qjidaa

<span>A full on chip low Dropout Voltage Regulator (LDO) with fast transient response and small capacitor compensation circuit is proposed. The novel technique is implemented to detect the variation voltage at the output of LDO and enable the proposed fast detector amplifier (FDA) to improve load transient response of 50mA load step. The large external capacitor used in Conventional LDO Regulators is removed allowing for greater power system integration for system-on-chip (SoC) applications. The 1.6-V Full On-Chip LDO voltage regulator with a power supply of 1.8 V was designed and simulated in the 0.18µm CMOS technology, consuming only 14 µA of ground current with a fast settling-time LNR(Line Regulation) and LOR(Load regulation) of 928ns and 883ns respectively while the rise and fall times in LNR and LOR is 500ns.</span>


2017 ◽  
Vol 26 (11) ◽  
pp. 1750175
Author(s):  
Changyuan Chang ◽  
Chao Hong ◽  
Yang Xu ◽  
Hailong Sun ◽  
Yao Chen

A constant voltage AC–DC converter based on the digital assistant technology is proposed in this paper, which has the advantage of high output precision. In this paper, a novel digital exponential wave generator is adopted in Constant Voltage (CV) mode to replace the normal triangle waveform to obtain a wider range of switching frequency, increasing the accuracy of output voltage under light load. The control chip is implemented based on NEC 1[Formula: see text][Formula: see text]m 5[Formula: see text]V/40[Formula: see text]V HVCMOS process, and a 5[Formula: see text]V/1.2[Formula: see text]A prototype has been built to verify the proposed control method. In PFM mode the deviation of output voltage is within [Formula: see text]% and the load regulation is [Formula: see text]%. Meanwhile, when the load jumps from light to heavy, the minimum output voltage could be maintained above 4.16[Formula: see text]V.


2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000106-000111 ◽  
Author(s):  
R.C. Murphree ◽  
S. Ahmed ◽  
M. Barlow ◽  
A. Rahman ◽  
H.A. Mantooth ◽  
...  

Abstract This paper establishes the first linear regulator in a 1.2 μm CMOS silicon carbide (SiC) process. The linear regulator presented consists of a SiC error amplifier and a pass transistor which has a W/L = 70,000 μm / 1.2 μm. The feedback loop is internal and the frequency compensation network is a combination of internal and external components. As a result of potential process variation in this emerging technology, the voltage reference used at the negative input terminal of the error amplifier has been made external. With an input voltage of 20 V to 30 V, the voltage regulator is able to provide a 15 V output and a continuous load current of 100 mA at temperatures ranging from 25 °C to over 400 °C. At a temperature of 400 °C, testing of the fabricated circuit has shown line regulation of less than 4 mV/V. Under the same test conditions, a load regulation of less than 420 mV/A is achieved.


2019 ◽  
Vol 54 (12) ◽  
pp. 3316-3325 ◽  
Author(s):  
Christopher Schaef ◽  
Kaladhar Radhakrishnan ◽  
Krishnan Ravichandran ◽  
James W. Tschanz ◽  
Vivek De ◽  
...  

2019 ◽  
Vol 27 (8) ◽  
pp. 1768-1778 ◽  
Author(s):  
Venkata Chaitanya Krishna Chekuri ◽  
Monodeep Kar ◽  
Arvind Singh ◽  
Saibal Mukhopadhyay
Keyword(s):  

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