Laterally vibrating lithium niobate MEMS resonators with high electromechanical coupling and Quality factor

2012 ◽  
Author(s):  
Songbin Gong ◽  
Gianluca Piazza
Keyword(s):  
Lithium Niobate ◽  
Quality Factor ◽  
Electromechanical Coupling ◽  
Mems Resonators

scholarly journals A Laterally Vibrating Lithium Niobate MEMS Resonator Array Operating at 500 °C in Air

Sensors ◽  
2020 ◽  
Vol 21 (1) ◽  
pp. 149
Author(s):  
Savannah R. Eisner ◽  
Cailin A. Chapin ◽  
Ruochen Lu ◽  
Yansong Yang ◽  
Songbin Gong ◽  
...  
Keyword(s):  
High Temperature ◽  
Lithium Niobate ◽  
Quality Factor ◽  
Electromechanical Coupling ◽  
Resonant Mode ◽  
Electromechanical Coupling Coefficient ◽  
Resonant Sensors ◽  
Mems Resonator ◽  
Temperature Coefficient Of Frequency ◽  
Temperature Exposure

This paper reports the high-temperature characteristics of a laterally vibrating piezoelectric lithium niobate (LiNbO3; LN) MEMS resonator array up to 500 °C in air. After a high-temperature burn-in treatment, device quality factor (Q) was enhanced to 508 and the resonance shifted to a lower frequency and remained stable up to 500 °C. During subsequent in situ high-temperature testing, the resonant frequencies of two coupled shear horizontal (SH0) modes in the array were 87.36 MHz and 87.21 MHz at 25 °C and 84.56 MHz and 84.39 MHz at 500 °C, correspondingly, representing a −3% shift in frequency over the temperature range. Upon cooling to room temperature, the resonant frequency returned to 87.36 MHz, demonstrating the recoverability of device performance. The first- and second-order temperature coefficient of frequency (TCF) were found to be −95.27 ppm/°C and 57.5 ppb/°C2 for resonant mode A, and −95.43 ppm/°C and 55.8 ppb/°C2 for resonant mode B, respectively. The temperature-dependent quality factor and electromechanical coupling coefficient (kt2) were extracted and are reported. Device Q decreased to 334 and total kt2 increased to 12.40% after high-temperature exposure. This work supports the use of piezoelectric LN as a material platform for harsh environment radio-frequency (RF) resonant sensors (e.g., temperature and infrared) incorporated with high coupling acoustic readout.

Impact of Frequency Mismatch on the Quality Factor of Large Arrays of X-Cut Lithium Niobate MEMS Resonators

2020 ◽  
Vol 29 (6) ◽  
pp. 1455-1463
Author(s):  
Luca Colombo ◽  
Abhay Kochhar ◽  
Gabriel Vidal-Alvarez ◽  
Gianluca Piazza
Keyword(s):  
Lithium Niobate ◽  
Quality Factor ◽  
Mems Resonators ◽  
Frequency Mismatch

scholarly journals Figure of Merit Enhancement of Laterally Vibrating RF-MEMS Resonators via Energy-Preserving Addendum Frame

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 105
Author(s):  
Temesgen Bailie Workie ◽  
Zhaohui Wu ◽  
Panliang Tang ◽  
Jingfu Bao ◽  
Ken-ya Hashimoto
Keyword(s):  
Quality Factor ◽  
Figure Of Merit ◽  
Electromechanical Coupling ◽  
Rf Mems ◽  
Acoustic Energy ◽  
Frame Structure ◽  
Electromechanical Coupling Coefficient ◽  
Element Analysis ◽  
Mems Resonators ◽  
Spurious Mode

This paper examines a new technique to improve the figure of merit of laterally vibrating RF-MEMS resonators through an energy-preserving suspended addendum frame structure using finite element analysis. The proposed suspended addendum frame on the sides of the resonant plate helps as a mechanical vibration isolator from the supporting substrate. This enables the resonator to have a low acoustic energy loss, resulting in a higher quality factor. The simulated attenuation characteristics of the suspended addendum frame are up to an order of magnitude larger than those achieved with the conventional structure. Even though the deployed technique does not have a significant impact on increasing the effective electromechanical coupling coefficient, due to a gigantic improvement in the unloaded quality factor, from 4106 to 51,136, the resonator with the suspended frame achieved an 11-folds improvement in the figure of merit compared to that of the conventional resonator. Moreover, the insertion loss was improved from 5 dB down to a value as low as 0.7 dB. Furthermore, a method of suppressing spurious mode is demonstrated to remove the one incurred by the reflected waves due to the proposed energy-preserving structure.

scholarly journals In-Situ Process and Simulation of High-Performance Piezoelectric-on-Silicon Substrate for SAW Sensor

2021 ◽  
Vol 8 ◽  
Author(s):  
Rui Ma ◽  
Weiguo Liu ◽  
Xueping Sun ◽  
Shun Zhou
Keyword(s):  
Thin Film ◽  
Lithium Niobate ◽  
High Performance ◽  
Electromechanical Coupling ◽  
Substrate Material ◽  
Electromechanical Coupling Coefficient ◽  
Bonding Layer ◽  
Saw Sensor ◽  
Rayleigh Mode

This paper studied the manufacturing process of Piezoelectric-on-Silicon (POS) substrate which integrates 128° Y–X Lithium niobate thin film and silicon wafer using Smart-Cut technology. The blistering and exfoliation processes of the He as-implanted LN crystal under different annealing temperatures are observed by the in-situ method. Unlike the conventional polishing process, the stripping mechanism of the Lithium niobate thin film is changed by controlling annealing temperature, which can improve the surface morphology of the peeling lithium niobate thin film. We prepared the 128° Y–X POS substrate with high single-crystal Lithium niobate thin film and surface roughness of 3.91 nm through Benzocyclobutene bonding. After simulating the surface acoustic wave (SAW) characteristics of the POS substrate, the results demonstrate that the Benzocyclobutene layer not only performs as a bonding layer but also can couple more vibrations into the LN thin film. The electromechanical coupling coefficient of the POS substrate is up to 7.59% in the Rayleigh mode when hLN/λ is 0.3 and hBCB/λ is 0.1. Therefore, as a high-performance substrate material, the POS substrate has proved to be an efficient method to miniaturize and integrate the SAW sensor.

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