scholarly journals Raman spectroscopy and X-ray diffraction studies of stress effects in PbTiO/sub 3/ thin films

2007 ◽  
Vol 54 (12) ◽  
pp. 2623-2631 ◽  
Author(s):  
Ausrine Bartasyte ◽  
Odette Chaix-Pluchery ◽  
Jens Kreisel ◽  
Jose Santiso ◽  
Samuel Margueron ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Effects

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1−x)O3 thin films

2006 ◽  
Vol 88 (25) ◽  
pp. 252901 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Vilho Lantto ◽  
Johannes Frantti ◽  
Jussi Hiltunen
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Effects

scholarly journals Spin transitions in La0.7 Ba0.3CoO3 thin films revealed by combining Raman spectroscopy and X-ray diffraction

2016 ◽  
Vol 120 (1) ◽  
pp. 015308 ◽  
Author(s):  
Zied Othmen ◽  
Olivier Copie ◽  
Kais Daoudi ◽  
Michel Boudard ◽  
Pascale Gemeiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Spin Transitions

Study on integration of aluminum-doped zinc oxide (AZO) thin films with graphene oxide (GO)

2018 ◽  
Vol 32 (19) ◽  
pp. 1840044
Author(s):  
Aditya Dalal ◽  
Animesh Mandal ◽  
Shubhada Adhi ◽  
Kiran Adhi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Graphene Oxide ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Vis Spectroscopy ◽  
Aluminum Doped Zinc Oxide ◽  
Uv Visible

Aluminum (0.5 at.%)-doped ZnO (AZO) thin films were deposited by pulsed laser deposition technique (PLD) in oxygen ambient of 10[Formula: see text] Torr. The deposited thin films were characterized by x-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy and uv–visible spectroscopy (UV–vis). Next, graphene oxide (GO) was synthesized by Hummers method and was characterized by XRD, UV–vis spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). Thereafter, GO solution was drop-casted on AZO thin films. These films were then characterized by Raman Spectroscopy, UV–vis spectroscopy and PL. Attempt is being made to comprehend the modifications in properties brought about by integration.

Sol-gel processing of nanocrystalline haematite thin films

1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Single Particles ◽  
X Ray ◽  
Transmission Electron ◽  
Gel Processing

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.

Study of annealing-induced changes in CdS thin films using X-ray diffraction and Raman spectroscopy

2007 ◽  
Vol 516 (1) ◽  
pp. 91-98 ◽  
Author(s):  
Shramana Mishra ◽  
Alka Ingale ◽  
U.N. Roy ◽  
Ajay Gupta
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cds Thin Films ◽  
Induced Changes

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

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