Impact of encapsulation materials on the performance of silicon-based solid state high pressure sensors with surface trenches

2011 ◽  
Author(s):  
M. Baumann ◽  
C. Sander ◽  
P. Ruther ◽  
O. Paul
Keyword(s):  
High Pressure ◽  
Solid State ◽  
Pressure Sensors ◽  
Silicon Based

scholarly journals Simulation and Nonlinearity Optimization of a High-Pressure Sensor

Sensors ◽  
2020 ◽  
Vol 20 (16) ◽  
pp. 4419
Author(s):  
Ting Li ◽  
Haiping Shang ◽  
Weibing Wang
Keyword(s):  
High Pressure ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Original Model ◽  
Ansys Software ◽  
Nonlinear Error ◽  
Sensor Model ◽  
Optimized Model ◽  
Simulation Results ◽  
Better Than

A pressure sensor in the range of 0–120 MPa with a square diaphragm was designed and fabricated, which was isolated by the oil-filled package. The nonlinearity of the device without circuit compensation is better than 0.4%, and the accuracy is 0.43%. This sensor model was simulated by ANSYS software. Based on this model, we simulated the output voltage and nonlinearity when piezoresistors locations change. The simulation results showed that as the stress of the longitudinal resistor (RL) was increased compared to the transverse resistor (RT), the nonlinear error of the pressure sensor would first decrease to about 0 and then increase. The theoretical calculation and mathematical fitting were given to this phenomenon. Based on this discovery, a method for optimizing the nonlinearity of high-pressure sensors while ensuring the maximum sensitivity was proposed. In the simulation, the output of the optimized model had a significant improvement over the original model, and the nonlinear error significantly decreased from 0.106% to 0.0000713%.

Electrolytes for advanced lithium ion batteries using silicon-based anodes

2019 ◽  
Vol 7 (16) ◽  
pp. 9432-9446 ◽  
Author(s):  
Zhixin Xu ◽  
Jun Yang ◽  
Hongping Li ◽  
Yanna Nuli ◽  
Jiulin Wang
Keyword(s):  
Solid State ◽  
Lithium Ion Batteries ◽  
Recent Progress ◽  
Lithium Ion ◽  
Review Article ◽  
Silicon Based

Recent progress in electrolytes from the liquid to the solid state for Si-based anodes is comprehensively summarized in this review article.

scholarly journals More superior pyroelectric performance of synthesized dravite by high-pressure solid-state method

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035304
Author(s):  
You Shan ◽  
Guojun Zhou ◽  
Kairen Chen ◽  
Changchun Zhao ◽  
Kun Shen ◽  
...  
Keyword(s):  
High Pressure ◽  
Solid State ◽  
Solid State Method ◽  
State Method

Solid-state reaction of niobium with diamond carbon at high pressure and high temperature to form superconducting composite

2021 ◽  
Vol 31 (3) ◽  
pp. 415-418
Author(s):  
Vladimir Yu. Osipov ◽  
Fedor M. Shakhov ◽  
Nikolai M. Romanov ◽  
Kazuyuki Takai
Keyword(s):  
High Pressure ◽  
High Temperature ◽  
Solid State ◽  
Solid State Reaction

Quantifying Solid-State Mechanical Mixing by High-Pressure Torsion

2021 ◽  
pp. 160419
Author(s):  
Yan Beygelzimer ◽  
Yuri Estrin ◽  
Andrey Mazilkin ◽  
Torsten Scherer ◽  
Brigitte Baretzky ◽  
...  
Keyword(s):  
High Pressure ◽  
Solid State ◽  
High Pressure Torsion ◽  
Mechanical Mixing

scholarly journals Extrusion of Polyethylene in Solid State under High Pressure

1970 ◽  
Vol 19 (199) ◽  
pp. 302-305 ◽  
Author(s):  
Kiyohisa IMADA ◽  
Tsuneo YAMAMOTO ◽  
Koichi UENO ◽  
Daisaku MATSUKUMA ◽  
Motowo TAKAYANAGI
Keyword(s):  
High Pressure ◽  
Solid State

scholarly journals A silicon-based surface code quantum computer

2016 ◽  
Vol 2 (1) ◽  
Author(s):  
Joe O’Gorman ◽  
Naomi H Nickerson ◽  
Philipp Ross ◽  
John JL Morton ◽  
Simon C Benjamin
Keyword(s):  
Quantum Computing ◽  
Solid State ◽  
Quantum Computer ◽  
Fault Tolerant ◽  
Device Fabrication ◽  
Impurity Atoms ◽  
Dipole Interactions ◽  
Total Phase ◽  
Surface Code ◽  
Silicon Based

Abstract Individual impurity atoms in silicon can make superb individual qubits, but it remains an immense challenge to build a multi-qubit processor: there is a basic conflict between nanometre separation desired for qubit–qubit interactions and the much larger scales that would enable control and addressing in a manufacturable and fault-tolerant architecture. Here we resolve this conflict by establishing the feasibility of surface code quantum computing using solid-state spins, or ‘data qubits’, that are widely separated from one another. We use a second set of ‘probe’ spins that are mechanically separate from the data qubits and move in and out of their proximity. The spin dipole–dipole interactions give rise to phase shifts; measuring a probe’s total phase reveals the collective parity of the data qubits along the probe’s path. Using a protocol that balances the systematic errors due to imperfect device fabrication, our detailed simulations show that substantial misalignments can be handled within fault-tolerant operations. We conclude that this simple ‘orbital probe’ architecture overcomes many of the difficulties facing solid-state quantum computing, while minimising the complexity and offering qubit densities that are several orders of magnitude greater than other systems.

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