Al-Doped Zinc Oxide Film Deposition in Function of Power by AC Bipolar Pulse in Reactive Magnetron Sputtering

2011 ◽  
Vol 39 (11) ◽  
pp. 2484-2485
Author(s):  
J. Garcia-Garcia ◽  
J. Pacheco-Sotelo ◽  
R. Valdivia-Barrientos ◽  
C. Rivera-Rodriguez ◽  
M. Pacheco-Pacheco ◽  
...  
2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.


2011 ◽  
Vol 59 (20) ◽  
pp. 7521-7529 ◽  
Author(s):  
X. Noirfalise ◽  
T. Godfroid ◽  
G. Guisbiers ◽  
R. Snyders

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