Comparable study on the effect of diluted NH4Cl solution on the postdeposition surface texture of as-deposited aluminum-doped zinc oxide films by direct current pulse and direct current reactive magnetron sputtering

2009 ◽  
Vol 255 (16) ◽  
pp. 7268-7272 ◽  
Author(s):  
Xiaoyong Gao ◽  
Qinggeng Lin ◽  
Hongliang Feng ◽  
Yongsheng Chen ◽  
Shie Yang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Current Pulse ◽  
Direct Current ◽  
Surface Texture ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Zinc Oxide Films ◽  
Aluminum Doped Zinc Oxide ◽  
Nh4cl Solution

X-ray diffraction and photoluminescence studies of zinc oxide films grown on silicon substrates by dc reactive magnetron sputtering

2008 ◽  
Vol 23 (S1) ◽  
pp. S94-S97 ◽  
Author(s):  
G. Juárez-Díaz ◽  
H. Solache-Carranco ◽  
G. Romero-Paredes R. ◽  
R. Peña-Sierra ◽  
J. Martínez-Juárez ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Zinc Oxide Films ◽  
Dc Reactive Magnetron Sputtering

Thin polycrystalline ZnO films were grown on silicon substrates by dc reactive magnetron sputtering using zinc oxide targets. The quality of the ZnO layers was assessed by X-ray diffraction (XRD), atomic force microscopy, Raman scattering, and photoluminescence measurements. The XRD studies and Raman studies revealed that the ZnO films crystallize in the wurtzite structure. Room temperature photoluminescence spectra consisted of a narrow near-band-edge ultraviolet band and a broad defect-related green band with peak positions at 380 and 516 nm, respectively. The main goal of the work was to define the growth conditions to prepare zinc oxide films with adequate properties to be used in electroluminescent devices. The films exhibited the best surface appearance with a 40:1 argon/oxygen flow rate, a total pressure of 1.5×10−3 mbar, and a substrate temperature of 230 °C. The structural and luminescence properties improved noticeably with the thermal annealing processes at 800 °C for 1 h.

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