Anomalous charge loss from floating-gate memory cells due to heavy ions irradiation

2002 ◽  
Vol 49 (6) ◽  
pp. 3051-3058 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
L. Larcher ◽  
A. Chimenton ◽  
J. Wyss ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Floating Gate ◽  
Memory Cells ◽  
Charge Loss ◽  
Floating Gate Memory

The Combined Effects of Cycling Endurance and TID on Floating Gate Memory Cells

2021 ◽  
Author(s):  
Side Song ◽  
Guozhu Liu ◽  
Qi He ◽  
Xiang Gu ◽  
Genshen Hong ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Memory Cell ◽  
Floating Gate ◽  
Combined Effects ◽  
Memory Cells ◽  
Threshold Voltage Shift ◽  
Floating Gate Memory ◽  
Interface Generation ◽  
Radiation Hardened ◽  
Radiation Induced

Abstract In this paper, the combined effects of cycling endurance and radiation on floating gate memory cell are investigated in detail, the results indicate that: 1.The programmed flash cells with a prior appropriate number of program and erase cycling stress exhibit much smaller threshold voltage shift than their counterpart in response to radiation, which is mainly ascribed to the recombination of trapped electrons (introduced by cycling stress) and trapped holes (introduced by irradiation) in the oxide surrounding the floating gate; 2.The radiation induced transconductance degradation in prior cycled flash cell is more severe than those without cycling stress in both of the programmed state and erased state; 3. Radiation is more likely to induce interface generation in programmed state than in erased state. This paper will be useful in understanding the issues involved in cycling endurance and radiation effects as well as in designing radiation hardened floating gate memory cells.

A new compact DC model of floating gate memory cells without capacitive coupling coefficients

2002 ◽  
Vol 49 (2) ◽  
pp. 301-307 ◽  
Author(s):  
L. Larcher ◽  
P. Pavan ◽  
S. Pietri ◽  
L. Albani ◽  
A. Marmiroli
Keyword(s):  
Floating Gate ◽  
Capacitive Coupling ◽  
Memory Cells ◽  
Coupling Coefficients ◽  
Floating Gate Memory

Radiation effects on floating-gate memory cells

2001 ◽  
Vol 48 (6) ◽  
pp. 2222-2228 ◽  
Author(s):  
G. Cellere ◽  
P. Pellati ◽  
A. Chimenton ◽  
J. Wyss ◽  
A. Modelli ◽  
...  
Keyword(s):  
Radiation Effects ◽  
Floating Gate ◽  
Memory Cells ◽  
Floating Gate Memory

Secondary Effects of Single Ions on Floating Gate Memory Cells

2006 ◽  
Vol 53 (6) ◽  
pp. 3291-3297 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi
Keyword(s):  
Floating Gate ◽  
Memory Cells ◽  
Secondary Effects ◽  
Floating Gate Memory

Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite Thin Film Prepared by Sputtering Method

2010 ◽  
Vol 1250 ◽  
Author(s):  
Tsung-Eong Hsieh ◽  
Kuo-Chang Chiang
Keyword(s):  
Floating Gate ◽  
Cross Sectional ◽  
Nanocomposite Layer ◽  
Voltage Sweep ◽  
Charge Loss ◽  
Floating Gate Memory ◽  
Voltage Stress ◽  
Antimony Oxides ◽  
One Step ◽  
Time Test

AbstractAgInSbTe (AIST)-SiO2 nanocomposite layer prepared by a one-step sputtering process utilizing target-attachment method was implanted in the nonvolatile floating gate memory (NFGM) devices. Device sample subjected to post annealing at 400°C for 2 min in atmospheric ambient exhibited a significant hysteresis memory window (ΔVFB) shift = 5.91V and charge density = 5.22×12 cm-2 after ±8V voltage sweep. During the retention time test, a ΔVFB shift about 3.50 V and charge loss about 28.4% were observed in the sample after a ±5V voltage stress for 104 sec. Cross-sectional TEM revealed that the nanocomposite layer contains the crystalline AIST nanoparticles with the sizes about 5 to 7 nm embedded in SiO2 matrix. XPS analysis indicated that annealing induces the reduction of antimony oxides to form metallic Sb nanocrystals and suppresses the oxygen defects and charge loss in nanocomposite layer. Analytical results illustrated that the utilization of AIST-SiO2 nanocomposite layer may simplify the preparation of NFGM device with satisfactory electrical properties, implying a promising feasibility of such a nanocomposite layer to NFGM devices.

A model for TID effects on floating Gate Memory cells

2004 ◽  
Vol 51 (6) ◽  
pp. 3753-3758 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi ◽  
P. Caprara ◽  
...  
Keyword(s):  
Floating Gate ◽  
Memory Cells ◽  
Floating Gate Memory
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