The radiation response of the high dielectric-constant hafnium oxide/silicon system

2002 ◽  
Vol 49 (6) ◽  
pp. 2636-2642 ◽  
Author(s):  
A.Y. Kang ◽  
P.M. Lenahan ◽  
J.F. Conley
2013 ◽  
Vol 250 (5) ◽  
pp. 957-967 ◽  
Author(s):  
Flora M. Li ◽  
Bernhard C. Bayer ◽  
Stephan Hofmann ◽  
Stuart P. Speakman ◽  
Caterina Ducati ◽  
...  

2005 ◽  
Vol 488 (1-2) ◽  
pp. 167-172 ◽  
Author(s):  
S.C. Chen ◽  
J.C. Lou ◽  
C.H. Chien ◽  
P.T. Liu ◽  
T.C. Chang

RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 51493-51502 ◽  
Author(s):  
Mohamed Karmaoui ◽  
E. Venkata Ramana ◽  
David M. Tobaldi ◽  
Luc Lajaunie ◽  
Manuel P. Graça ◽  
...  

Strontium hafnium oxide (SrHfO3) has great potential as a high-k gate dielectric material, for use in memories, capacitors, CMOS and MOSFETs.


2020 ◽  
Vol 8 (32) ◽  
pp. 16661-16668
Author(s):  
Huayao Tu ◽  
Shouzhi Wang ◽  
Hehe Jiang ◽  
Zhenyan Liang ◽  
Dong Shi ◽  
...  

The carbon fiber/metal oxide/metal oxynitride layer sandwich structure is constructed in the electrode to form a mini-plate capacitor. High dielectric constant metal oxides act as dielectric to increase their capacitance.


2018 ◽  
Vol 6 (9) ◽  
pp. 2370-2378 ◽  
Author(s):  
Yang Liu ◽  
Cheng Zhang ◽  
Benyuan Huang ◽  
Xu Wang ◽  
Yulong Li ◽  
...  

A novel skin–core structured fluorinated MWCNT nanofiller was prepared to fabricate epoxy composite with broadband high dielectric constant and low dielectric loss.


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