Design of the Addressable Test Structure for ${S}$ -Parameter-Based RF Device Characterization

2017 ◽  
Vol 65 (6) ◽  
pp. 2122-2131
Author(s):  
Xiao-Peng Yu ◽  
Le Zhang ◽  
Zheng Shi ◽  
Er-Ping Li
Keyword(s):  
Test Structure ◽  
Device Characterization ◽  
S Parameter

Multiphoton OBIC for Device Characterization and Defect Localization

2016 ◽  
Author(s):  
Gregory M. Johnson ◽  
Lloyd Smith ◽  
Ziyan Xu ◽  
Tomonori Nakamura
Keyword(s):  
Forward Bias ◽  
Optical Resolution ◽  
Test Structure ◽  
Optical Beam ◽  
Ring Oscillator ◽  
Induced Current ◽  
Device Characterization ◽  
Defect Localization ◽  
Static Conditions ◽  
Optical Beam Induced Current

Abstract Applications of MpOBIC (Multi-photon Optical Beam Induced Current) are discussed for use in defect localization. The MpOBIC signals in a ring oscillator under static conditions are examined and demonstrate the superior optical resolution of the system over traditional OBIRCH. A 5-fin diode test structure is examined under passive conditions, demonstrating that true multi-photon OBIC has occurred from the backside. The same diode is examined in forward bias, and the resulting discussion concludes that both OBIC and OBIRCH signals are present in the sample. Thus, we claim that both OBIC and OBIRCH signals can provide device characterization information from an MpOBIC system.

Inaln/GaN HEMT Small-Signal Parameter Extraction

2013 ◽  
Vol 690-693 ◽  
pp. 564-568
Author(s):  
Xiao Wei Zhang ◽  
Peng Xu ◽  
Ke Jin Jia ◽  
Zhi Hong Feng ◽  
Zheng Ping Zhao
Keyword(s):  
Parameter Extraction ◽  
Test Structure ◽  
Parameter Method ◽  
Small Signal ◽  
Signal Parameter ◽  
Parasitic Inductance ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
S Parameter ◽  
Device Technology

We use S-Parameter Methodto extract device parameter of InAlN/GaN HEMT in this paper. We find thatparasitic capacitance and parasitic inductance can be extracted in traditionaltest structure method, but do nothing about parasitic resistor. Cold parameter methodcan extract parasitic resistor efficiently, but there is greater error inparasitic capacitance and parasitic inductance extraction. We propose a methodwhich combines test structure method and cold parameter method to extract parasitic parameteraccurately. We can acquire intrinsic parameters through getting rid ofparasitism parameters, and can fitting test outcome satisfactorily. It canreflect accurately the physical characteristics of GaN HEMT devices, and givesfeedback and guidance to device technology at the same time.

Modulated S-parameter measurements for isothermal microwave device characterization

1996 ◽  
Vol 17 (11) ◽  
pp. 537-539 ◽  
Author(s):  
G. Metze ◽  
M. Calcatera ◽  
C. Eppers ◽  
B. Neidhard ◽  
J. Whalen
Keyword(s):  
Microwave Device ◽  
Device Characterization ◽  
S Parameter

Development of Test Structure for Variability Evaluation using Charge-Based Capacitance Measurement

2014 ◽  
Vol E97.C (11) ◽  
pp. 1117-1123 ◽  
Author(s):  
Katsuhiro TSUJI ◽  
Kazuo TERADA ◽  
Ryota KIKUCHI
Keyword(s):  
Test Structure ◽  
Capacitance Measurement

Marginal RF Gain Investigation and Root Cause Determination

2013 ◽  
Author(s):  
Keith Harber ◽  
Steve Brockett
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Power Amplifier ◽  
Physical Analysis ◽  
Root Cause ◽  
S Parameter ◽  
Mode Of Operation ◽  
S Parameters

Abstract This paper outlines the failure analysis of a Radio Frequency only (RF-only) failure on a complex Multimode Multiband Power Amplifier (MMPA) module, where slightly lower gain was observed in one mode of operation. 2 port S-parameter information was collected and utilized to help localize the circuitry causing the issue. A slight DC electrical difference was observed, and simulation was utilized to confirm that difference was causing the observed S-parameters. Physical analysis uncovered a very visible cause for the RF-only failure.

Precise Localization of 28 nm via Chain Resistive Defect Using EBAC and Nanoprobing

2012 ◽  
Author(s):  
P. Larré ◽  
H. Tupin ◽  
C. Charles ◽  
R.H. Newton ◽  
A. Reverdy
Keyword(s):  
Electron Beam ◽  
Failure Analysis ◽  
Test Structure ◽  
Precise Localization ◽  
Isolation Method ◽  
Accurate Detection ◽  
Conventional Methods ◽  
Technology Nodes ◽  
Tem Lamella

Abstract As technology nodes continue to shrink, resistive opens have become increasingly difficult to detect using conventional methods such as AVC and PVC. The failure isolation method, Electron Beam Absorbed Current (EBAC) Imaging has recently become the preferred method in failure analysis labs for fast and highly accurate detection of resistive opens and shorts on a number of structures. This paper presents a case study using a two nanoprobe EBAC technique on a 28nm node test structure. This technique pinpointed the fail and allowed direct TEM lamella.

Backside FIB Device Modifications Through the BOX Layer of an SOI Device

2002 ◽  
Author(s):  
Jeffery P. Huynh ◽  
Joseph P. Shannon ◽  
Richard W. Johnson ◽  
Mike Santana ◽  
Thomas Y. Chu ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Cross Section ◽  
Test Structure ◽  
Ring Oscillator ◽  
Oscillator Circuit ◽  
Entire Process ◽  
Oscillator Frequency ◽  
Polysilicon Gate ◽  
Resistance Data

Abstract Modifications directly to a transistor’s source/drain and polysilicon gate through the backside of a SOI device were made. Contact resistance data was obtained by creating contacts through the buried oxide layer of a manufactured test structure. A ring oscillator circuit was modified and the shift in oscillator frequency was measured. Finally, cross section images of the FIB created contacts were presented in the paper to illustrate the entire process.

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