A System for the Dynamic Control and Thermal Characterization of Ultra Low Power Gas Sensors

2011 ◽  
Vol 60 (5) ◽  
pp. 1876-1883 ◽  
Author(s):  
F Rastrello ◽  
P Placidi ◽  
A Scorzoni
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Dynamic Control ◽  
Thermal Characterization ◽  
Ultra Low Power

scholarly journals Thermal Transient Measurements of an Ultra-Low-Power MOX Sensor

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
F. Rastrello ◽  
P. Placidi ◽  
L. Abbati ◽  
A. Scorzoni ◽  
E. Cozzani ◽  
...  
Keyword(s):  
Low Power ◽  
Operating Temperature ◽  
Dynamic Control ◽  
Thermal Conductance ◽  
Thermal Characterization ◽  
Thermal Time ◽  
Worst Case ◽  
Ultra Low Power ◽  
Pulse Width Modulated ◽  
Time Period

This paper describes a system for the simultaneous dynamic control and thermal characterization of the heating of an Ultra Low Power (ULP) micromachined sensor. A Pulse Width Modulated (PWM) powering system has been realized using a microcontroller to characterize the thermal behavior of a device. Objectives of the research were to analyze the relation between the time period and duty cycle of the PWM signal and the operating temperature of such ULP micromachined systems, to observe the thermal time constants of the device during the heating phase and to measure the total thermal conductance. Constant target heater resistance experiments highlighted that an approximately constant heater temperature at regime can only be obtained if the time period of the heating signal is smaller than 50 s. Constant power experiments show quantitatively a thermal time constant that decreases during heating in a range from 2.3 ms to 2 ms as a function of an increasing temperature rise between the ambient and the operating temperature. Moreover, we calculated the total thermal conductance. Finally, repeatability of experimental results was assessed by guaranteeing the standard deviation of the controlled temperature which was within C in worst case conditions.

Design, fabrication, and characterization of low-power gas sensors based on organic-inorganic nano-composite

2017 ◽  
Vol 42 ◽  
pp. 284-292 ◽  
Author(s):  
Ayah F.S. Abu-Hani ◽  
Falah Awwad ◽  
Yaser E. Greish ◽  
Ahmad I. Ayesh ◽  
Saleh T. Mahmoud
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Nano Composite ◽  
Fabrication And Characterization

Analysis and Characterization of Ultra Low Power Branch Predictors

2018 ◽  
Author(s):  
Athanasios Chatzidimitriou ◽  
George Papadimitriou ◽  
Dimitris Gizopoulos ◽  
Shrikanth Ganapathy ◽  
John Kalamatianos
Keyword(s):  
Low Power ◽  
Ultra Low Power

scholarly journals A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

2019 ◽  
Vol 70 (2) ◽  
pp. 145-151
Author(s):  
Mourad Hebali ◽  
Menaouer Bennaoum ◽  
Mohammed Berka ◽  
Abdelkader Baghdad Bey ◽  
Mohammed Benzohra ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Electrical Characterization ◽  
Electrical Performance ◽  
Subthreshold Slope ◽  
Ultra Low Power ◽  
Dg Mosfet ◽  
Subthreshold Operation ◽  
Very High

Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

Development and characterization of low power perovskite CO gas sensors

2011 ◽  
Author(s):  
A. Fort ◽  
M. Mugnaini ◽  
I. Pasquini ◽  
S. Rocchi ◽  
L. Romualdi ◽  
...  
Keyword(s):  
Low Power ◽  
Gas Sensors ◽  
Co Gas

Development of a dedicated instrumentation for electrical and thermal characterization of chemiresistive gas sensors

2021 ◽  
Vol 92 (7) ◽  
pp. 074702
Author(s):  
M. Della Ciana ◽  
M. Valt ◽  
B. Fabbri ◽  
P. Bernardoni ◽  
V. Guidi ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Thermal Characterization ◽  
Chemiresistive Gas Sensors
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