Current-Mode Capacitive Sensor Interface Circuit With Single-Ended to Differential Output Capability

2009 ◽  
Vol 58 (11) ◽  
pp. 3914-3920 ◽  
Author(s):  
T. Singh ◽  
T. Saether ◽  
T. Ytterdal
Keyword(s):  
Current Mode ◽  
Capacitive Sensor ◽  
Sensor Interface ◽  
Interface Circuit

An integrated sensor interface circuit for ECG measurements

2003 ◽  
Author(s):  
J. Nurmi ◽  
M. Williams ◽  
P. Jarvilehto ◽  
K.-P. Estola ◽  
A. Ruha ◽  
...  
Keyword(s):  
Integrated Sensor ◽  
Sensor Interface ◽  
Interface Circuit

scholarly journals Toward High Throughput Core-CBCM CMOS Capacitive Sensors for Life Science Applications: A Novel Current-Mode for High Dynamic Range Circuitry

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3370 ◽  
Author(s):  
Saghi Forouhi ◽  
Rasoul Dehghani ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
High Performance ◽  
Life Science ◽  
Dynamic Range ◽  
Current Mode ◽  
Capacitive Sensor ◽  
Oxide Semiconductor ◽  
Capacitance Measurement ◽  
Biological Research ◽  
Cmos Process ◽  
Capacitive Sensors

This paper proposes a novel charge-based Complementary Metal Oxide Semiconductor (CMOS) capacitive sensor for life science applications. Charge-based capacitance measurement (CBCM) has significantly attracted the attention of researchers for the design and implementation of high-precision CMOS capacitive biosensors. A conventional core-CBCM capacitive sensor consists of a capacitance-to-voltage converter (CVC), followed by a voltage-to-digital converter. In spite of their high accuracy and low complexity, their input dynamic range (IDR) limits the advantages of core-CBCM capacitive sensors for most biological applications, including cellular monitoring. In this paper, after a brief review of core-CBCM capacitive sensors, we address this challenge by proposing a new current-mode core-CBCM design. In this design, we combine CBCM and current-controlled oscillator (CCO) structures to improve the IDR of the capacitive readout circuit. Using a 0.18 μm CMOS process, we demonstrate and discuss the Cadence simulation results to demonstrate the high performance of the proposed circuitry. Based on these results, the proposed circuit offers an IDR ranging from 873 aF to 70 fF with a resolution of about 10 aF. This CMOS capacitive sensor with such a wide IDR can be employed for monitoring cellular and molecular activities that are suitable for biological research and clinical purposes.

scholarly journals A Current-Mode TransImpedance Amplifier for Capacitive Sensors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1033
Author(s):  
Alessandro Nastro ◽  
Andrea De Marcellis ◽  
Marco Ferrari ◽  
Vittorio Ferrari
Keyword(s):  
Current Mode ◽  
Cmos Technology ◽  
Detection Sensitivity ◽  
Transimpedance Amplifier ◽  
Current Conveyors ◽  
Interface Circuit ◽  
Linear Behavior ◽  
Board Level ◽  
Voltage Conversion ◽  
A Current

A Current-Mode (CM) TransImpedance Amplifier (TIA) based on Second Generation Current Conveyors (CCIIs) for capacitive microsensor measurements is presented. The designed electronic interface performs a capacitance-to-voltage conversion using 3 CCIIs and 3 resistors exploiting a synchronous-demodulation technique to improve the overall detection sensitivity and resolution of the system. A CM-TIA solution designed at transistor level in AMS0.35 µm integrated CMOS technology with a power consumption lower than 900 µW is proposed. Experimental results obtained with a board-level prototype show linear behavior of the proposed interface circuit with a resolution up to 34.5 fF and a sensitivity up to 223 mV/nF, confirming the theoretical expectations.

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