In-Circuit Loss Measurement of a High-Frequency Integrated Power Electronics Module

2008 ◽  
Vol 57 (7) ◽  
pp. 1394-1402 ◽  
Author(s):  
Wenduo Liu ◽  
J.D. van Wyk ◽  
Bing Lu
Keyword(s):  
Power Electronics ◽  
High Frequency ◽  
Loss Measurement ◽  
Circuit Loss

High frequency model for power electronics capacitors

2001 ◽  
Vol 16 (2) ◽  
pp. 157-166 ◽  
Author(s):  
S. Siami ◽  
C. Joubert ◽  
C. Glaize
Keyword(s):  
Power Electronics ◽  
High Frequency ◽  
Frequency Model

Interference Characteristics Analysis of Power Electronics Devices Used in New Energy Vehicles

2013 ◽  
Vol 772 ◽  
pp. 556-559
Author(s):  
Yan Jie Guo ◽  
Li Fang Wang ◽  
Cheng Lin Liao
Keyword(s):  
Power Electronics ◽  
High Frequency ◽  
Circuit Model ◽  
Bipolar Transistor ◽  
Current Transfer ◽  
Common Mode ◽  
Insulated Gate Bipolar Transistor ◽  
New Energy ◽  
Characteristics Analysis ◽  
New Energy Vehicles

In this paper, the insulated gate bipolar transistor (IGBT) is taken as an example to discuss the interference characteristics of the power electronics devices used in new energy vehicles. Firstly, the on-off processes of the IGBT are analyzed and reconstructed. Then, the high frequency circuit model of IGBT is established, considering both the on-off processes and the effects of the stray parameters. Furthermore, the effects of IGBT on equipment around are investigated based on the calculations of interference voltage transfer gains and common mode (CM) current transfer admittance. Finally, the model and analyses are verified by both the simulations and the experiments.

Sign in / Sign up

Export Citation Format

Share Document