High-Speed Ring Oscillator Using Skewed Delay Scheme Integrated by Metal-Oxide TFTs

2020 ◽  
Vol 67 (12) ◽  
pp. 5526-5531
Author(s):  
Wen-Xing Xu ◽  
Jun-Wei Chen ◽  
Lei Zhou ◽  
Miao Xu ◽  
Lei Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Ring Oscillator ◽  
Oxide Tfts

A Low-Power Ring Oscillator Using Pull-Up Control Scheme Integrated by Metal–Oxide TFTs

2017 ◽  
Vol 64 (12) ◽  
pp. 4946-4951 ◽  
Author(s):  
Jian-Dong Wu ◽  
Fan Zhan ◽  
Lei Zhou ◽  
Wei-Jing Wu ◽  
Miao Xu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Ring Oscillator ◽  
Control Scheme ◽  
Oxide Tfts

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

A High-Speed Temperature Sensor with Low Supply Sensitivity for SoC Thermal Monitoring

2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li
Keyword(s):  
Temperature Sensor ◽  
Conversion Rate ◽  
High Speed ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Temperature Sensitive ◽  
Cmos Process ◽  
Digital Code ◽  
Thermal Monitoring ◽  
Worst Case

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

High-speed visualization of metal oxide precursor in multiphase AC arc during nanoparticle formation

2020 ◽  
Vol 59 (SH) ◽  
pp. SHHC08 ◽  
Author(s):  
Manabu Tanaka ◽  
Yuki Saito ◽  
Hiroki Maruyama ◽  
Takayuki Watanabe
Keyword(s):  
Metal Oxide ◽  
High Speed ◽  
Nanoparticle Formation ◽  
Oxide Precursor ◽  
Ac Arc

Active-Matrix Micro-LED Display Driven by Metal Oxide TFTs Using Digital PWM Method

2021 ◽  
pp. 1-6
Author(s):  
Yi-Zhen Lin ◽  
Chun Liu ◽  
Jin-Hui Zhang ◽  
Yi-Kai Yuan ◽  
Wei Cai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Active Matrix ◽  
Oxide Tfts
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