Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode

2020 ◽  
Vol 67 (11) ◽  
pp. 5059-5062
Author(s):  
Tsung-Han Yeh ◽  
Po-Hsun Chen ◽  
Chih-Yang Lin ◽  
Yi-Ting Tseng ◽  
Wen-Chung Chen ◽  
...  
Keyword(s):  
Vanadium Oxide ◽  
Threshold Switching ◽  
Switching Characteristics

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

scholarly journals Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

2019 ◽  
Vol 16 (16) ◽  
pp. 20190404-20190404
Author(s):  
Chandreswar Mahata ◽  
Wonwoo Kim ◽  
Shiwhan Kim ◽  
Muhammad Ismail ◽  
Min-Hwi Kim ◽  
...  
Keyword(s):  
Threshold Switching ◽  
High K ◽  
Switching Characteristics

Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application

2015 ◽  
Vol 147 ◽  
pp. 318-320 ◽  
Author(s):  
Jaehyuk Park ◽  
Euijun Cha ◽  
Daeseok Lee ◽  
Sangheon Lee ◽  
Jeonghwan Song ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Switching Characteristics

Effect of Deposition Temperature on I-V Characteristics of Vanadium Oxide Film

2012 ◽  
Author(s):  
X. Y. Wei ◽  
M. Hu ◽  
F. Wang ◽  
J. Wei ◽  
K. L. Zhang
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Photoelectron Spectroscopy ◽  
Nonvolatile Memory ◽  
Semiconductor Device ◽  
Oxide Thin Film ◽  
Reset Voltage ◽  
Switching Characteristics ◽  
Vanadium Oxide Thin Films ◽  
Memory Applications

In this paper, the effects of deposition temperatures on the resistive switching characteristics of polycrystalline vanadium oxide thin films have been investigated. VOx thin films were prepared by reactive sputtering at various deposition temperatures (RT, 250 °C, 350 °C, and 450 °C, respectively). X-ray photoelectron spectroscopy revealed the compositions of VOx thin films. Electrical switching has been observed in Cu(tip)/VOx/Cu memory units by Semiconductor Device Analyzer. Crystalline characterizations revealed that as-deposited (RT) film was amorphous, the films crystallized into different phases (e.g. VO2, V2O5, VO1.86 etc.) with increasing the deposition temperatures. The VOx memory units have low Vset and Vreset. Furthermore, their set voltage decreased from 1.52 V to 0.45 V and reset voltage decreased from 1.01 V to 0.41 V with increasing the deposition temperatures from 250 °C to 450 °C, respectively. The thin films have three orders of change in resistivity between ON-state and OFF-state except as-deposited film. The vanadium oxide thin film can be a promising material for low power nonvolatile memory applications.

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