Oxygen Radical Control via Atmospheric Pressure Plasma Treatment for Highly Stable IGZO Thin-Film Transistors

2020 ◽  
Vol 67 (8) ◽  
pp. 3135-3140
Author(s):  
Eun Goo Lee ◽  
Jintaek Park ◽  
Sung-Eun Lee ◽  
Hyun-Jae Na ◽  
Nam-Kwang Cho ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Atmospheric Pressure Plasma ◽  
Oxygen Radical ◽  
Pressure Plasma

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment

2020 ◽  
Vol 20 (7) ◽  
pp. 4110-4113 ◽  
Author(s):  
Yi-Ming Chen ◽  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yu-Xin Zhang ◽  
Ni Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Atmospheric Pressure Plasma ◽  
Oxide Thin Film ◽  
Pressure Plasma

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

Investigation of LaAlO 3 /ZrO 2 / a ‐InGaZnO thin‐film transistors using atmospheric pressure plasma jet

2014 ◽  
Vol 50 (9) ◽  
pp. 706-708 ◽  
Author(s):  
Chien‐Hung Wu ◽  
Hau‐Yuan Huang ◽  
Shui‐Jinn Wang ◽  
Kow‐Ming Chang ◽  
Hsin‐Yu Hsu
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Atmospheric Pressure Plasma Jet ◽  
Pressure Plasma
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