Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

Xianda Zhou; Lei Lu; Kai Wang; Man Wong; Johnny K. O. Sin; Hoi-Sing Kwok

doi:10.1109/ted.2019.2940720

Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2940720 ◽

2019 ◽

Vol 66 (11) ◽

pp. 4759-4763

Author(s):

Xianda Zhou ◽

Lei Lu ◽

Kai Wang ◽

Man Wong ◽

Johnny K. O. Sin ◽

...

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Schottky Diode ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Cited By ~ 15

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Room Temperature Processed Ultrahigh-Frequency Indium-Gallium–Zinc-Oxide Schottky Diode

IEEE Electron Device Letters ◽

10.1109/led.2016.2535904 ◽

2016 ◽

Vol 37 (4) ◽

pp. 389-392 ◽

Cited By ~ 21

Author(s):

Jiawei Zhang ◽

Hanbin Wang ◽

Joshua Wilson ◽

Xiaochen Ma ◽

Jidong Jin ◽

...

Keyword(s):

Zinc Oxide ◽

Schottky Diode ◽

Room Temperature ◽

Ultrahigh Frequency ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Applied Physics Letters ◽

10.1063/1.4824875 ◽

2013 ◽

Vol 103 (15) ◽

pp. 152103 ◽

Cited By ~ 19

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Characteristics ◽

Indium Gallium

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of Applied Physics ◽

10.1063/1.4904843 ◽

2014 ◽

Vol 116 (24) ◽

pp. 245302 ◽

Cited By ~ 5

Author(s):

Jae-sung Kim ◽

Byung Su Oh ◽

Mingxing Piao ◽

Min-Kyu Joo ◽

Ho-Kyun Jang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Carrier Concentration ◽

Thin Film Transistors ◽

Trap Density ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Scientific Reports ◽

10.1038/s41598-017-16585-x ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 21

Author(s):

Seonghwan Hong ◽

Sung Pyo Park ◽

Yeong-gyu Kim ◽

Byung Ha Kang ◽

Jae Won Na ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Scientific Reports ◽

10.1038/s41598-017-11461-0 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 25

Author(s):

Yeonwoo Shin ◽

Sang Tae Kim ◽

Kuntae Kim ◽

Mi Young Kim ◽

Saeroonter Oh ◽

...

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Catalytic Layer ◽

Indium Gallium Zinc Oxide ◽

Low Temperature Crystallization ◽

Indium Gallium ◽

Temperature Crystallization

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Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

Applied Physics Letters ◽

10.1063/1.4916030 ◽

2015 ◽

Vol 106 (11) ◽

pp. 113506 ◽

Cited By ~ 15

Author(s):

Qian Xin ◽

Linlong Yan ◽

Yi Luo ◽

Aimin Song

Keyword(s):

Zinc Oxide ◽

Breakdown Voltage ◽

Schottky Diode ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c21611 ◽

2021 ◽

Vol 13 (7) ◽

pp. 8584-8594

Author(s):

Jiaona Zhang ◽

Weihong Huang ◽

Kuan-Chang Chang ◽

Yuhao Shi ◽

Changbin Zhao ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b05724 ◽

2016 ◽

Vol 8 (31) ◽

pp. 20192-20199 ◽

Cited By ~ 32

Author(s):

Rawat Jaisutti ◽

Jaeyoung Kim ◽

Sung Kyu Park ◽

Yong-Hoon Kim

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Gas Sensors ◽

Room Temperature ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors

AIP Advances ◽

10.1063/1.4922440 ◽

2015 ◽

Vol 5 (6) ◽

pp. 067123 ◽

Cited By ~ 10

Author(s):

Narendra Kumar ◽

Jitendra Kumar ◽

Siddhartha Panda

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Field Effect ◽

Ph Sensitive ◽

Indium Gallium Zinc Oxide ◽

Sensitive Layer ◽

Indium Gallium

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