Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors

Rawat Jaisutti; Jaeyoung Kim; Sung Kyu Park; Yong-Hoon Kim

doi:10.1021/acsami.6b05724

Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b05724 ◽

2016 ◽

Vol 8 (31) ◽

pp. 20192-20199 ◽

Cited By ~ 32

Author(s):

Rawat Jaisutti ◽

Jaeyoung Kim ◽

Sung Kyu Park ◽

Yong-Hoon Kim

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Gas Sensors ◽

Room Temperature ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Improved Mobility and Transmittance of Room-Temperature-Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Postfabrication Anneals

JOM ◽

10.1007/s11837-013-0569-4 ◽

2013 ◽

Vol 65 (4) ◽

pp. 519-524 ◽

Cited By ~ 9

Author(s):

T. L. Alford ◽

M. J. Gadre ◽

Rajitha N. P. Vemuri

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Room Temperature ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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High-performance dual-layer channel indium gallium zinc oxide thin-film transistors fabricated in different oxygen contents at low temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef07 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF07 ◽

Cited By ~ 15

Author(s):

Yu Tian ◽

Dedong Han ◽

Suoming Zhang ◽

Fuqing Huang ◽

Dongfang Shan ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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A room temperature process for the fabrication of amorphous indium gallium zinc oxide thin-film transistors with co-sputtered ZrxSi1−xO2Gate dielectric and improved electrical and hysteresis performance

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.04cg06 ◽

2017 ◽

Vol 56 (4S) ◽

pp. 04CG06 ◽

Cited By ~ 1

Author(s):

Chien-Hsiung Hung ◽

Shui-Jinn Wang ◽

Pang-Yi Liu ◽

Chien-Hung Wu ◽

Nai-Sheng Wu ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Room Temperature ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Room Temperature Processed Ultrahigh-Frequency Indium-Gallium–Zinc-Oxide Schottky Diode

IEEE Electron Device Letters ◽

10.1109/led.2016.2535904 ◽

2016 ◽

Vol 37 (4) ◽

pp. 389-392 ◽

Cited By ~ 21

Author(s):

Jiawei Zhang ◽

Hanbin Wang ◽

Joshua Wilson ◽

Xiaochen Ma ◽

Jidong Jin ◽

...

Keyword(s):

Zinc Oxide ◽

Schottky Diode ◽

Room Temperature ◽

Ultrahigh Frequency ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Low temperature characteristics in amorphous indium-gallium-zinc-oxide thin-film transistors down to 10 K

Applied Physics Letters ◽

10.1063/1.4824875 ◽

2013 ◽

Vol 103 (15) ◽

pp. 152103 ◽

Cited By ~ 19

Author(s):

Md Delwar Hossain Chowdhury ◽

Piero Migliorato ◽

Jin Jang

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Temperature Characteristics ◽

Indium Gallium

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Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors

Applied Physics Letters ◽

10.1063/1.2716355 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123512 ◽

Cited By ~ 127

Author(s):

Arun Suresh ◽

Patrick Wellenius ◽

Anuj Dhawan ◽

John Muth

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Thin Film Transistors ◽

Room Temperature ◽

Pulsed Laser ◽

Indium Gallium Zinc Oxide ◽

Indium Gallium

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Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Journal of Applied Physics ◽

10.1063/1.4904843 ◽

2014 ◽

Vol 116 (24) ◽

pp. 245302 ◽

Cited By ~ 5

Author(s):

Jae-sung Kim ◽

Byung Su Oh ◽

Mingxing Piao ◽

Min-Kyu Joo ◽

Ho-Kyun Jang ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Carrier Concentration ◽

Thin Film Transistors ◽

Trap Density ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

Scientific Reports ◽

10.1038/s41598-017-16585-x ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 21

Author(s):

Seonghwan Hong ◽

Sung Pyo Park ◽

Yeong-gyu Kim ◽

Byung Ha Kang ◽

Jae Won Na ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Solution Process ◽

Passivation Layer ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer

Scientific Reports ◽

10.1038/s41598-017-11461-0 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 25

Author(s):

Yeonwoo Shin ◽

Sang Tae Kim ◽

Kuntae Kim ◽

Mi Young Kim ◽

Saeroonter Oh ◽

...

Keyword(s):

Zinc Oxide ◽

Low Temperature ◽

Catalytic Layer ◽

Indium Gallium Zinc Oxide ◽

Low Temperature Crystallization ◽

Indium Gallium ◽

Temperature Crystallization

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Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c21611 ◽

2021 ◽

Vol 13 (7) ◽

pp. 8584-8594

Author(s):

Jiaona Zhang ◽

Weihong Huang ◽

Kuan-Chang Chang ◽

Yuhao Shi ◽

Changbin Zhao ◽

...

Keyword(s):

Thin Film ◽

Zinc Oxide ◽

Low Temperature ◽

Thin Film Transistors ◽

Performance Enhancement ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Indium Gallium

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