scholarly journals Performance and Reliability Comparison of ZnO and IGZO Thin-Film Transistors and Inverters Fabricated at a Maximum Process Temperature of 115 °C

2019 ◽  
Vol 66 (9) ◽  
pp. 3861-3866 ◽  
Author(s):  
R. A. Rodriguez-Davila ◽  
I. Mejia ◽  
R. A. Chapman ◽  
C. D. Young ◽  
M. Quevedo-Lopez
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Process Temperature ◽  
Maximum Process

Ion implantation of microcrystalline silicon for low process temperature top gate thin film transistors

1999 ◽  
Vol 337 (1-2) ◽  
pp. 203-207 ◽  
Author(s):  
V. Chu ◽  
H. Silva ◽  
L.M. Redondo ◽  
C. Jesus ◽  
M.F. Silva ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Thin Film Transistors ◽  
Process Temperature ◽  
Microcrystalline Silicon

Extremely Thin Al2 O3 Surface-Passivated Nanocrystalline ZnO Thin-Film Transistors Designed for Low Process Temperature

2016 ◽  
Vol 99 (4) ◽  
pp. 1305-1310 ◽  
Author(s):  
Cheol Hyoun Ahn ◽  
So Hee Kim ◽  
Yong-Hoon Kim ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Process Temperature ◽  
Zno Thin Film

Impact of Dehydrogenation Annealing Process Temperature on Reliability of Polycrystalline Silicon Thin Film Transistors

2019 ◽  
Vol 40 (10) ◽  
pp. 1638-1641 ◽  
Author(s):  
Shin-Ping Huang ◽  
Po-Hsun Chen ◽  
Hong-Chih Chen ◽  
Yu-Zhe Zheng ◽  
Ann-Kuo Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Annealing Process ◽  
Process Temperature ◽  
Silicon Thin Film
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