scholarly journals Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

2019 ◽  
Vol 66 (4) ◽  
pp. 1694-1698 ◽  
Author(s):  
Niraj Man Shrestha ◽  
Yiming Li ◽  
Tetsuya Suemitsu ◽  
Seiji Samukawa
Keyword(s):  
Electron Mobility ◽  
Electrical Characteristic ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gate Structure

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
Sign in / Sign up

Export Citation Format

Share Document