Simulation study on electrical characteristic of AlGaN/GaN high electron mobility transistors with AlN spacer layer

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EF08 ◽  
Author(s):  
Niraj Man Shrestha ◽  
Yiming Li ◽  
Edward Yi Chang
Keyword(s):  
Simulation Study ◽  
Electron Mobility ◽  
Electrical Characteristic ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Spacer Layer

Improved recess-ohmics in AlGaN/GaN high-electron-mobility transistors with AlN spacer layer on silicon substrate

2010 ◽  
Vol 7 (10) ◽  
pp. 2412-2414 ◽  
Author(s):  
Subramaniam Arulkumaran ◽  
Ng Geok Ing ◽  
Vicknesh Sahmuganathan ◽  
Liu Zhihong ◽  
Bryan Maung
Keyword(s):  
Electron Mobility ◽  
Silicon Substrate ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Spacer Layer
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