Insights Into the Impact of Pocket and Source Elevation in Vertical Gate Elevated Source Tunnel FET Structures

2019 ◽  
Vol 66 (1) ◽  
pp. 752-758 ◽  
Author(s):  
Ashita ◽  
Sajad A. Loan ◽  
Mohammad Rafat
Keyword(s):  
Tunnel Fet ◽  
The Impact ◽  
Elevated Source

scholarly journals Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer

2020 ◽  
Vol 10 (9) ◽  
pp. 3054
Author(s):  
Hyun Woo Kim ◽  
Daewoong Kwon
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Model Parameters ◽  
Tunnel Fet ◽  
Drain Side ◽  
Fringing Field ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
The Impact

Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously. In order to analyze the proposed Tunnel FET, electrical characteristics are evaluated by technology computer-aided design (TCAD) simulations with calibrated tunneling model parameters. The impact of the spacer κ values on tunneling rate is investigated with the symmetric spacer. As the κ values of the spacer increase, the on-current becomes enhanced since tunneling probabilities are increased by the fringing field through the spacer. However, on the drain-side, that fringing field through the drain-side spacer increases ambipolar current and gate-to-drain capacitance, which degrades leakage property and switching response. Therefore, the drain-side low-κ spacer, which makes the low fringing field, is adapted asymmetrically with the source-side high-κ spacer. This asymmetric spacer results in the reduction of gate-to-drain capacitance and switching delay with the improved on-current induced by the source-side high-κ spacer.

scholarly journals Impactful Study of F-shaped Tunnel FET

2021 ◽  
Author(s):  
PRABHAT SINGH ◽  
DHARMENDRA SINGH YADAV
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Source Region ◽  
Gate Oxide ◽  
Crowding Effect ◽  
Turn On ◽  
Tunnel Fet ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
The Impact

Abstract In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric le crowding effect at the corners of the source region which reflect in term of high On-current (Ion). The Ion of proposed device is increased up to 10-4 A=μm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (Von = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized.

An Analytical Modeling and Simulation of Surrounding Gate TFET with an Impact of Dual Material Gate and Stacked Oxide for Low Power Applications

2019 ◽  
Vol 57 ◽  
pp. 68-76 ◽  
Author(s):  
V. Dharshan ◽  
N.B. Balamurugan ◽  
T.S. Arun Samuel
Keyword(s):  
Mathematical Expression ◽  
Drain Current ◽  
Gate Stack ◽  
Tunnel Fet ◽  
Novel Structure ◽  
High K ◽  
Surrounding Gate ◽  
High Degree ◽  
The Impact ◽  
Dual Material

In this paper, an analytical model for modified Surrounding Gate Tunnel FET with gate stack engineering and different gate metals has been developed. Further, considering the scaling advantageous of Gate stack engineering and high degree performance of dual material engineering, the both has been integrated into a novel structure known as Surrounding Gate (SG) Tunnel FET with stacked oxide SiO2/high-k and dual material (DM) has been proposed. The two dimensional (2D) potential at the surface and electric field mathematical models for the DMSG TFET are developed by solving 2D Poisson's equation with matching device boundary conditions. Based on the Kane's formula, mathematical expression for the band-to-band (BTB) tunneling generation rate is derived and then used to calculate the drain current. The impact on the proposed device performance due to the variation of different device parameters has also been studied. It has been found from the presented results that the ON current of the DMSG TFET with stack is 10-6A, OFF current is 10-13A and ON/OFF ratio is 107. The mathematical results have been verified using the simulated results obtained from TCAD, a 3-D device simulator from ATLAS.

Nanowire Tunnel FETs - Device Structure, Transistor Dimension and Material Choice

2011 ◽  
Vol 1302 ◽  
Author(s):  
J. Knoch
Keyword(s):  
Design Guidelines ◽  
Type Ii ◽  
Device Structure ◽  
One Dimensional ◽  
Tunnel Fet ◽  
Performance Predictions ◽  
Material Choice ◽  
Tunnel Fets ◽  
And Performance ◽  
The Impact

ABSTRACTThe performance of tunnel FETs is investigated and the impact of device structure and dimension as well as the impact of the transistor material will be studied. For instance, using nanowires with thin diameter providing one-dimensional transport together with a wrap-gate device structure strongly improves the tunnel FET performance. In addition, the use of III-V type II heterostructures is a further performance booster. However, the use of III-V semiconductors with low density of states can be problematic if the device is not designed properly. Here we will give design guidelines and performance predictions of nanowire tunnel FETs based on non-equilibrium Greens functions formalism simulations.

Formation of Lunar Craters and Bright Rays as a Result of Meteorite Impacts

1962 ◽  
Vol 14 ◽  
pp. 415-418
Author(s):  
K. P. Stanyukovich ◽  
V. A. Bronshten
Keyword(s):  
Explosive Charge ◽  
The Moon ◽  
Meteorite Impacts ◽  
The Earth ◽  
Lunar Craters ◽  
The Impact

The phenomena accompanying the impact of large meteorites on the surface of the Moon or of the Earth can be examined on the basis of the theory of explosive phenomena if we assume that, instead of an exploding meteorite moving inside the rock, we have an explosive charge (equivalent in energy), situated at a certain distance under the surface.

The Geosciences Applied to Lunar Exploration

1962 ◽  
Vol 14 ◽  
pp. 169-257 ◽  
Author(s):  
J. Green
Keyword(s):  
Lunar Surface ◽  
Probable Mechanism ◽  
Point Of View ◽  
Lunar Exploration ◽  
Geological Model ◽  
Apply Geophysics ◽  
Surface Features ◽  
The Impact

The term geo-sciences has been used here to include the disciplines geology, geophysics and geochemistry. However, in order to apply geophysics and geochemistry effectively one must begin with a geological model. Therefore, the science of geology should be used as the basis for lunar exploration. From an astronomical point of view, a lunar terrain heavily impacted with meteors appears the more reasonable; although from a geological standpoint, volcanism seems the more probable mechanism. A surface liberally marked with volcanic features has been advocated by such geologists as Bülow, Dana, Suess, von Wolff, Shaler, Spurr, and Kuno. In this paper, both the impact and volcanic hypotheses are considered in the application of the geo-sciences to manned lunar exploration. However, more emphasis is placed on the volcanic, or more correctly the defluidization, hypothesis to account for lunar surface features.

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