A Surface-Potential-Based Drain Current Compact Model of Dynamic-Depletion Polysilicon Thin-Film Transistors

2018 ◽  
Vol 65 (11) ◽  
pp. 4875-4882
Author(s):  
Fei Yu ◽  
Chuanzhong Xu ◽  
Gongyi Huang
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Compact Model

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

scholarly journals A Review for Compact Model of Thin-Film Transistors (TFTs)

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 599 ◽  
Author(s):  
Nianduan Lu ◽  
Wenfeng Jiang ◽  
Quantan Wu ◽  
Di Geng ◽  
Ling Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Circuit Design ◽  
Surface Potential ◽  
Radio Frequency Identification ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Theoretical Description ◽  
Compact Model ◽  
Compact Models ◽  
Identification Tags

Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

Analytical surface-potential compact model for amorphous-IGZO thin-film transistors

2015 ◽  
Vol 117 (21) ◽  
pp. 215705 ◽  
Author(s):  
Zhiwei Zong ◽  
Ling Li ◽  
Jin Jang ◽  
Nianduan Lu ◽  
Ming Liu
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Compact Model

Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

2008 ◽  
Vol 47 (10) ◽  
pp. 7798-7802 ◽  
Author(s):  
Hiroshi Tsuji ◽  
Tsuyoshi Kuzuoka ◽  
Yuji Kishida ◽  
Yoshiyuki Shimizu ◽  
Masaharu Kirihara ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Current Model ◽  
Drain Current ◽  
Silicon Thin Film
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