DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETs

2018 ◽  
Vol 65 (9) ◽  
pp. 4015-4018 ◽  
Author(s):  
Gaspard Hiblot
Keyword(s):  
Channel Length ◽  
Modulation Coefficient

Joint Blind Estimation of Channel Length and Noise Variance in OFDM Systems

2011 ◽  
Vol E94-B (12) ◽  
pp. 3614-3617
Author(s):  
Bin SHENG ◽  
Pengcheng ZHU ◽  
Xiaohu YOU
Keyword(s):  
Channel Length ◽  
Blind Estimation ◽  
Ofdm Systems ◽  
Noise Variance

Reducing Roof Solar Heat Gain by Using Double-Skin Ventilated Roofs

2020 ◽  
Vol 38 (3A) ◽  
pp. 402-411
Author(s):  
Mohannad R. Ghanim ◽  
Sabah T. Ahmed
Keyword(s):  
Inclination Angle ◽  
Convection Heat Transfer ◽  
Ventilation Rate ◽  
Channel Length ◽  
Air Gap ◽  
Galvanized Steel ◽  
Heat Gain ◽  
Solar Heat ◽  
Double Skin ◽  
Solar Heat Gain

Double skin ventilated roof is one of the important passive cooling techniques to reduce solar heat gain through roofs. In this research, an experimental study was performed to investigate the thermal behaviour of a double skin roof model. The model was made of two parallel galvanized steel plates. Galvanized steel has been used in the roof construction of industrial buildings and storehouses in Iraq. The effect of inclination angle (ϴ) from the horizontal and the spacing (S) between the plates was investigated at different radiation intensities. It is found that using a double skin roof arrangement with a sufficient air gap (S) can reduce the heat gain significantly. The higher the inclination angle (ϴ) the higher the ventilation rate, the lower the heat gain through the roof. In this study, increasing the air gap from 2 cm to 4 cm reduced the heat gain significantly but when the gap was further increased to 6 cm, the reduction in the heat flux was insignificant. A dimensionless correlation was also reduced between Nusselt number () and the single parameter  where L is the channel length. This correlation can be handily utilized for designing of engineering applications dealing with high temperature difference natural convection heat transfer.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

Current-Signature-Based Analysis of Complex Test Fails

1999 ◽  
Author(s):  
Anne E. Gattiker ◽  
Phil Nigh ◽  
Wojciech Maly
Keyword(s):  
Failure Analysis ◽  
Physical Nature ◽  
Channel Length ◽  
Test Methods ◽  
Multiple Test ◽  
Physical Mechanisms ◽  
Test Behavior ◽  
Complex Test ◽  
Current Signature ◽  
Insight Into

Abstract This article provides an analysis of a class of failures observed during the SEMATECH-sponsored Test Methods Experiment. The analysis focuses on use of test-based failure analysis and IDDQ signature analysis to gain insight into the physical mechanisms underlying such subtle failures. In doing so, the analysis highlights techniques for understanding failure mechanisms using only tester data. In the experiment, multiple test methods were applied to a 0.45 micrometer effective channel length ASIC. Specifically, ICs that change test behavior from before to after burn-in are studied to understand the physical nature of the mechanism underlying their failure. Examples of the insights provided by the test-based analysis include identifying cases where there are multiple or complex defects and distinguishing cases where the defect type is likely to be a short versus an open and determining if the defect is marginal. These insights can be helpful for successful failure analysis.

A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

2018 ◽  
Vol 10 (4) ◽  
pp. 04027-1-04027-4
Author(s):  
M. Djerioui ◽  
◽  
M. Hebali ◽  
D. Chalabi ◽  
A. Saidane ◽  
...  
Keyword(s):  
Graphical Method ◽  
Channel Length ◽  
Electrostatic Potentials

Projected Performance of Sub-10 nm GaN-based Double Gate MOSFETs

2017 ◽  
Vol 2 (2) ◽  
pp. 15-19 ◽  
Author(s):  
Md. Saud Al Faisal ◽  
Md. Rokib Hasan ◽  
Marwan Hossain ◽  
Mohammad Saiful Islam
Keyword(s):  
High Speed ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
Channel Length ◽  
Capacitive Coupling ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Short Channel ◽  
Channel Effects ◽  
Silvaco Atlas

GaN-based double gate metal-oxide semiconductor field-effect transistors (DG-MOSFETs) in sub-10 nm regime have been designed for the next generation logic applications. To rigorously evaluate the device performance, non-equilibrium Green’s function formalism are performed using SILVACO ATLAS. The device is turn on at gate voltage, VGS =1 V while it is going to off at VGS = 0 V. The ON-state and OFF-state drain currents are found as 12 mA/μm and ~10-8 A/μm, respectively at the drain voltage, VDS = 0.75 V. The sub-threshold slope (SS) and drain induced barrier lowering (DIBL) are ~69 mV/decade and ~43 mV/V, which are very compatible with the CMOS technology. To improve the figure of merits of the proposed device, source to gate (S-G) and gate to drain (G-D) distances are varied which is mentioned as underlap. The lengths are maintained equal for both sides of the gate. The SS and DIBL are decreased with increasing the underlap length (LUN). Though the source to drain resistance is increased for enhancing the channel length, the underlap architectures exhibit better performance due to reduced capacitive coupling between the contacts (S-G and G-D) which minimize the short channel effects. Therefore, the proposed GaN-based DG-MOSFETs as one of the excellent promising candidates to substitute currently used MOSFETs for future high speed applications.

Unraveling the anomalous channel-length-dependent blue energy conversion using engineered alumina nanochannels

Nano Energy ◽  
2021 ◽  
pp. 105930
Author(s):  
Yen-Shao Su ◽  
Shih-Chieh Hsu ◽  
Po-Hsien Peng ◽  
Jie-Yu Yang ◽  
Mengyao Gao ◽  
...  
Keyword(s):  
Energy Conversion ◽  
Channel Length

scholarly journals Impact of device scaling on the electrical properties of MoS2 field-effect transistors

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Goutham Arutchelvan ◽  
Quentin Smets ◽  
Devin Verreck ◽  
Zubair Ahmed ◽  
Abhinav Gaur ◽  
...  
Keyword(s):  
Field Effect Transistors ◽  
Oxide Thickness ◽  
Channel Length ◽  
Contact Length ◽  
Power Performance ◽  
Semiconducting Materials ◽  
Large Area ◽  
Short Channel ◽  
Device Scaling ◽  
Performance Area

AbstractTwo-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fabricated on large-area grown MoS2 material with channel length down to 30 nm, contact length down to 13 nm and capacitive effective oxide thickness (CET) down to 1.9 nm. These devices show best-in-class performance with transconductance of 185 μS/μm and a minimum subthreshold swing (SS) of 86 mV/dec. We find that scaling the top-contact length has no impact on the contact resistance and electrostatics of three monolayers MoS2 transistors, because edge injection is dominant. Further, we identify that SS degradation occurs at short channel length and can be mitigated by reducing the CET and lowering the Schottky barrier height. Finally, using a power performance area (PPA) analysis, we present a roadmap of material improvements to make 2D devices competitive with silicon gate-all-around devices.

scholarly journals Channel-length dependence of particle diffusivity in confinement

Soft Matter ◽  
2021 ◽  
Author(s):  
Soichiro Tottori ◽  
Karolis Misiunas ◽  
Vahe Tshitoyan ◽  
Ulrich Keyser
Keyword(s):  
Channel Length ◽  
Fundamental Importance ◽  
Large Molecules ◽  
Diffusive Behavior ◽  
Channel Proteins ◽  
Length Dependence

Understanding the diffusive behavior of particles and large molecules in channels is of fundamental importance in biological and synthetic systems, such as channel proteins, nanopores, and nanofluidics. Although theoretical and...

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