Investigation of Traps in Thin-Film Organic Semiconductors Using Differential Analysis of Steady-State Current–Voltage Characteristics

2018 ◽  
Vol 65 (8) ◽  
pp. 3430-3437 ◽  
Author(s):  
S. M. H. Rizvi ◽  
B. Mazhari
Keyword(s):  
Thin Film ◽  
Steady State ◽  
Organic Semiconductors ◽  
Differential Analysis ◽  
Current Voltage ◽  
Steady State Current ◽  
Current Voltage Characteristics

Temperature and Field Dependence in Polymer Light Emitting Diodes

1999 ◽  
Vol 558 ◽  
Author(s):  
L. D. Bozano ◽  
S.A. Carter ◽  
J.C. Scott ◽  
G.G. Malliaras ◽  
P.J. Brock
Keyword(s):  
Experimental Data ◽  
Steady State ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Phenylene Vinylene ◽  
Light Emitting ◽  
Current Voltage ◽  
Steady State Current ◽  
Polymer Light Emitting Diodes ◽  
Current Voltage Characteristics

ABSTRACTWe investigate the electrical properties of Polymer Light Emitting Diodes (LED's). The experimental data consists of steady state current-voltage characteristics and radiance as a function of temperature.The basic LED structure is Anode/MEH-PPV (2-methoxy,5-(2'-ethyl-hexyloxy)-l,4-phenylene vinylene)/Cathode, with a polymer film 120-140 nm thick. We use different anode/cathode pairs to study transport and light emission properties. Measurements of external quantum efficiency of bipolar and monopolar devices are presented from 200 K to 300 K. The electron and hole mobilities are derived in the trap-free limit and at high voltages.

Temperature and Field Dependence in Polymer Light Emitting Diodes

1999 ◽  
Vol 561 ◽  
Author(s):  
L. D. Bozano ◽  
S.A. Carter ◽  
J.C. Scott ◽  
G.G. Malliaras ◽  
P.J. Brock
Keyword(s):  
Experimental Data ◽  
Steady State ◽  
Light Emitting Diodes ◽  
Light Emission ◽  
Phenylene Vinylene ◽  
Light Emitting ◽  
Current Voltage ◽  
Steady State Current ◽  
Polymer Light Emitting Diodes ◽  
Current Voltage Characteristics

ABSTRACTWe investigate the electrical properties of Polymer Light Emitting Diodes (LED's). The experimental data consists of steady state current-voltage characteristics and radiance as a function of temperature.The basic LED structure is Anode/MEH-PPV (2-methoxy,5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene)/Cathode, with a polymer film 120-140 nm thick. We use different anode/cathode pairs to study transport and light emission properties. Measurements of external quantum efficiency of bipolar and monopolar devices are presented from 200 K to 300 K. The electron and hole mobilities are derived in the trap-free limit and at high voltages.

Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets

1984 ◽  
Vol 33 ◽  
Author(s):  
Jerry G. Fossum ◽  
Adelmo Ortiz-Conde
Keyword(s):  
Steady State ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon On Insulator ◽  
High Angle ◽  
Current Voltage ◽  
Strong Inversion ◽  
Steady State Current ◽  
Current Voltage Characteristics ◽  
Conduction Properties

ABSTRACTA physical model that describes the steady-state current-voltage characteristics of field-effect transistors (MOSFETs) fabricated in (poly)silicon-on-insulator (SOI) is described. The model predicts that a single high-angle grain boundary, especially one traversing the channel near the drain, can control the conduction properties of the MOSFET for all (weak-to-strong) inversion conditions in all (linear-to-saturation) regions of operation.

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