scholarly journals Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design

2018 ◽  
Vol 65 (7) ◽  
pp. 2964-2972 ◽  
Author(s):  
Francesco Maria Puglisi ◽  
Nicolo Zagni ◽  
Luca Larcher ◽  
Paolo Pavan
Keyword(s):  
Circuit Design ◽  
Random Access ◽  
Compact Modeling ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Defect-Based Compact Modeling of Random Telegraph Noise

2020 ◽  
pp. 517-552
Author(s):  
Pieter Weckx ◽  
Ben Kaczer ◽  
Marko Simicic ◽  
Bertrand Parvais ◽  
Dimitri Linten
Keyword(s):  
Compact Modeling ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Transistor-level characterization of static random access memory bit failures induced by random telegraph noise

2016 ◽  
Vol 55 (4S) ◽  
pp. 04ED05 ◽  
Author(s):  
Tomoko Mizutani ◽  
Takuya Saraya ◽  
Kiyoshi Takeuchi ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Static Random Access Memory ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Neural network based analysis of random telegraph noise in resistive random access memories

2020 ◽  
Vol 35 (2) ◽  
pp. 025021 ◽  
Author(s):  
G González-Cordero ◽  
M B González ◽  
A Morell ◽  
F Jiménez-Molinos ◽  
F Campabadal ◽  
...  
Keyword(s):  
Neural Network ◽  
Random Access ◽  
Random Telegraph Noise ◽  
Telegraph Noise

Operations, Charge Transport, and Random Telegraph Noise in HfOx Resistive Random Access Memory: a Multi-scale Modeling Study

MRS Advances ◽  
2016 ◽  
Vol 1 (5) ◽  
pp. 327-338 ◽  
Author(s):  
Francesco M. Puglisi ◽  
Luca Larcher ◽  
Andrea Padovani ◽  
Paolo Pavan
Keyword(s):  
Charge Transport ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Operating Conditions ◽  
Current Fluctuations ◽  
Access Memory ◽  
Random Telegraph Noise ◽  
Multi Scale ◽  
Telegraph Noise

ABSTRACTIn this work we explore the mechanisms responsible for Random Telegraph Noise (RTN) fluctuations in HfOx Resistive Random Access Memory (RRAM) devices. The statistical properties of the RTN are analyzed in many operating conditions exploiting the Factorial Hidden Markov Model (FHMM) to decompose the multilevel RTN traces in a superposition of two-level fluctuations. This allows the simultaneous characterization of individual defects contributing to the RTN. Results, together with multi-scale physics-based simulations, allows thoroughly investigating the physical mechanisms which could be responsible for the RTN current fluctuations in the two resistive states of these devices, including also the charge transport features in a comprehensive framework. We consider two possible options, which are the Coulomb blockade effect and the possible existence of metastable states for the defects assisting charge transport. Results indicate that both options may be responsible for RTN current fluctuations in HRS, while RTN in LRS is attributed to the temporary screening effect of the charge trapped at defect sites around the conductive filament.

Compact modeling and simulation of Random Telegraph Noise under non-stationary conditions in the presence of random dopants

2012 ◽  
Vol 52 (12) ◽  
pp. 2955-2961 ◽  
Author(s):  
G. Wirth ◽  
D. Vasileska ◽  
N. Ashraf ◽  
L. Brusamarello ◽  
R. Della Giustina ◽  
...  
Keyword(s):  
Modeling And Simulation ◽  
Compact Modeling ◽  
Random Telegraph Noise ◽  
Telegraph Noise ◽  
Stationary Conditions ◽  
Random Dopants

scholarly journals A Complex Model via Phase-Type Distributions to Study Random Telegraph Noise in Resistive Memories

Mathematics ◽  
2021 ◽  
Vol 9 (4) ◽  
pp. 390
Author(s):  
Juan E. Ruiz-Castro ◽  
Christian Acal ◽  
Ana M. Aguilera ◽  
Juan B. Roldán
Keyword(s):  
Random Access ◽  
Resistive Random Access Memory ◽  
Complex Model ◽  
Random Telegraph Noise ◽  
Important Concern ◽  
Telegraph Noise ◽  
Phase Type ◽  
The Laplace Transform ◽  
The Mean ◽  
Number Of Visits

A new stochastic process was developed by considering the internal performance of macro-states in which the sojourn time in each one is phase-type distributed depending on time. The stationary distribution was calculated through matrix-algorithmic methods and multiple interesting measures were worked out. The number of visits distribution to a determine macro-state were analyzed from the respective differential equations and the Laplace transform. The mean number of visits to a macro-state between any two times was given. The results were implemented computationally and were successfully applied to study random telegraph noise (RTN) in resistive memories. RTN is an important concern in resistive random access memory (RRAM) operation. On one hand, it could limit some of the technological applications of these devices; on the other hand, RTN can be used for the physical characterization. Therefore, an in-depth statistical analysis to model the behavior of these devices is of essential importance.

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