Complex Band Structure Effects in k $\cdot$ p-Based Quantum Transport Simulations of p-Type Silicon Nanowire Transistors

2018 ◽  
Vol 65 (4) ◽  
pp. 1298-1302 ◽  
Author(s):  
Anne Ziegler ◽  
Mathieu Luisier
Keyword(s):  
Band Structure ◽  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Type Silicon ◽  
P Type

Flicker noise in N-type and P-type silicon nanowire transistors

2008 ◽  
Author(s):  
Seungwon Yang ◽  
Younghwan Son ◽  
Sung Dae Suk ◽  
Dong-Won Kim ◽  
Donggun Park ◽  
...  
Keyword(s):  
Flicker Noise ◽  
Silicon Nanowire ◽  
Nanowire Transistors ◽  
Type Silicon ◽  
P Type

Random Telegraph Noise in n-type and p-type silicon nanowire transistors

2008 ◽  
Author(s):  
Seungwon Yang ◽  
Kyoung Hwan Yeo ◽  
Dong-Won Kim ◽  
Kang-ill Seo ◽  
Donggun Park ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Random Telegraph Noise ◽  
Nanowire Transistors ◽  
Type Silicon ◽  
Telegraph Noise ◽  
P Type

Influence of discrete dopant on quantum transport in silicon nanowire transistors

2012 ◽  
Vol 70 ◽  
pp. 92-100 ◽  
Author(s):  
Nima Dehdashti Akhavan ◽  
Isabelle Ferain ◽  
Ran Yu ◽  
Pedram Razavi ◽  
Jean-Pierre Colinge
Keyword(s):  
Quantum Transport ◽  
Silicon Nanowire ◽  
Nanowire Transistors

Encoding Highly Nonequilibrium Boron Concentrations and Abrupt Morphology in p-Type/n-Type Silicon Nanowire Superlattices

2017 ◽  
Vol 9 (42) ◽  
pp. 37105-37111 ◽  
Author(s):  
David J. Hill ◽  
Taylor S. Teitsworth ◽  
Seokhyoung Kim ◽  
Joseph D. Christesen ◽  
James F. Cahoon
Keyword(s):  
Silicon Nanowire ◽  
Type Silicon ◽  
P Type

Parallel and Complementary Detection of Proteins by p-type and n-type Silicon Nanowire Transistor Arrays

2005 ◽  
Vol 900 ◽  
Author(s):  
Gengfeng Zheng ◽  
Fernando Patolsky ◽  
Charles M. Lieber
Keyword(s):  
Real Time ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Sensor Arrays ◽  
Rapid Screening ◽  
Label Free ◽  
Type Silicon ◽  
Nanowire Sensor ◽  
P Type ◽  
Prostate Specific Antigens

ABSTRACTLabel-free, real-time, parallel and complementary electrical detection of proteins is demonstrated by p-type and n-type silicon nanowire field-effect transistors in the same arrays. Composed of hundreds of individually electrically addressable nanowire devices with highly sensitive and reproducible performances, these nanowire arrays can be controllably modified by monoclonal antibodies, and show discrete conductance changes characteristic of highly selective binding and unbinding of target proteins, such as prostate specific antigens (PSA), thus providing a general and powerful platform for high-throughput real-time parallel detection and rapid screening of libraries of biomolecules. Studies show that the PSA proteins can be routinely detected at femtomolar concentrations with high selectivity, and simultaneously incorporation of both p-type and n-type silicon nanowire devices enable discrimination against false positive/negative signals. The integrated complementary nanowire sensor arrays open up substantial opportunities for diagnosis and treatment of complex diseases such as cancer, detection of biological threats, and fundamental proteomic and biophysical studies.

Three-dimensional k · p real-space quantum transport simulations of p-type nanowire transistors: Influence of ionized impurities

2011 ◽  
Vol 99 (8) ◽  
pp. 082113 ◽  
Author(s):  
Nicolas Pons ◽  
Nicolas Cavassilas ◽  
Laurent Raymond ◽  
Fabienne Michelini ◽  
Michel Lannoo ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Three Dimensional ◽  
Real Space ◽  
Nanowire Transistors ◽  
P Type
Sign in / Sign up

Export Citation Format

Share Document