Enhanced Electrical Performance and Negative Bias Illumination Stability of Solution-Processed InZnO Thin-Film Transistor by Boron Addition

2018 ◽  
Vol 65 (2) ◽  
pp. 520-525 ◽  
Author(s):  
De-Yao Zhong ◽  
Jun Li ◽  
Cheng-Yu Zhao ◽  
Chuan-Xin Huang ◽  
Jiang-Hua Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Negative Bias ◽  
Boron Addition ◽  
Solution Processed ◽  
Stability Of Solution

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

Flip-flop logic circuit based on fully solution-processed organic thin film transistor devices with reduced variations in electrical performance

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DK03 ◽  
Author(s):  
Yasunori Takeda ◽  
Yudai Yoshimura ◽  
Faiz Adi Ezarudin Bin Adib ◽  
Daisuke Kumaki ◽  
Kenjiro Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuit ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Solution Processed ◽  
Flip Flop

Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors

2019 ◽  
Vol 7 (34) ◽  
pp. 10635-10641 ◽  
Author(s):  
Minh Nhut Le ◽  
Hyeongyeon Kim ◽  
Yeo Kyung Kang ◽  
Youngmin Song ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Temperature Solution ◽  
Bulk Charge ◽  
Amorphous Metal Oxide

A facile bulk charge transfer doping method enabled electrical performance improvement of a low temperature solution processed thin film transistor.

Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 53310-53318 ◽  
Author(s):  
Da Eun Kim ◽  
Sung Woon Cho ◽  
Bora Kim ◽  
Jae Hui Shin ◽  
Won Jun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Robust Solution ◽  
Indium Zinc Oxide ◽  
Systematic Strategy ◽  
Izo Thin Film

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.

Bio-sorbable, liquid electrolyte gated thin-film transistor based on a solution-processed zinc oxide layer

2014 ◽  
Vol 174 ◽  
pp. 383-398 ◽  
Author(s):  
Mandeep Singh ◽  
Gerardo Palazzo ◽  
Giuseppe Romanazzi ◽  
Gian Paolo Suranna ◽  
Nicoletta Ditaranto ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Dissolution Kinetics ◽  
Liquid Electrolyte ◽  
Electrical Performance ◽  
Zno Films ◽  
Solution Processed ◽  
Oxide Semiconductors ◽  
Physiological Fluid ◽  
Operation Stability

Among the metal oxide semiconductors, ZnO has been widely investigated as a channel material in thin-film transistors (TFTs) due to its excellent electrical properties, optical transparency and simple fabrication via solution-processed techniques. Herein, we report a solution-processable ZnO-based thin-film transistor gated through a liquid electrolyte with an ionic strength comparable to that of a physiological fluid. The surface morphology and chemical composition of the ZnO films upon exposure to water and phosphate-buffered saline (PBS) are discussed in terms of the operation stability and electrical performance of the ZnO TFT devices. The improved device characteristics upon exposure to PBS are associated with the enhancement of the oxygen vacancies in the ZnO lattice due to Na+ doping. Moreover, the dissolution kinetics of the ZnO thin film in a liquid electrolyte opens the possible applicability of these devices as an active element in “transient” implantable systems.

Sign in / Sign up

Export Citation Format

Share Document