Chemically robust solution-processed indium zinc oxide thin film transistors fabricated by back channel wet-etched Mo electrodes

RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 53310-53318 ◽  
Author(s):  
Da Eun Kim ◽  
Sung Woon Cho ◽  
Bora Kim ◽  
Jae Hui Shin ◽  
Won Jun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Solution Processed ◽  
Robust Solution ◽  
Indium Zinc Oxide ◽  
Systematic Strategy ◽  
Izo Thin Film

We designed a systematic strategy for a chemically robust solution-processed IZO thin film transistor with back channel wet-etched Mo electrodes, which showed superior electrical performance and uniformity.

Improved Electrical Performance of SiO2-Doped Indium Zinc Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (3) ◽  
pp. 1470-1473 ◽  
Author(s):  
Yooseong Lim ◽  
Namgyung Hwang ◽  
Jeongsuk Lee ◽  
Sehyeong Lee ◽  
Moonsuk Yi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Bulk charge-transfer doping of amorphous metal oxide: fullerene blends for solution-processed amorphous indium zinc oxide thin-film transistors

2019 ◽  
Vol 7 (34) ◽  
pp. 10635-10641 ◽  
Author(s):  
Minh Nhut Le ◽  
Hyeongyeon Kim ◽  
Yeo Kyung Kang ◽  
Youngmin Song ◽  
Xugang Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Transfer ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Solution Processed ◽  
Indium Zinc Oxide ◽  
Temperature Solution ◽  
Bulk Charge ◽  
Amorphous Metal Oxide

A facile bulk charge transfer doping method enabled electrical performance improvement of a low temperature solution processed thin film transistor.

Capillary-Force-Pattern Formation of Indium-Zinc-Oxide Thin-Film Transistor

2019 ◽  
Vol 19 (4) ◽  
pp. 2179-2182
Author(s):  
Hyunji Shin ◽  
Dongwook Kim ◽  
Jaehoon Park ◽  
Seong-Ho Song ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Pattern Formation ◽  
Capillary Force ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23459-23474 ◽  
Author(s):  
Taki Eddine Taouririt ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Marwa Adaika ◽  
Slimane Chala ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Dielectric Layers ◽  
High K ◽  
Different Types ◽  
Silvaco Atlas

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide

RSC Advances ◽  
2015 ◽  
Vol 5 (63) ◽  
pp. 51440-51445 ◽  
Author(s):  
Yuzhi Li ◽  
Linfeng Lan ◽  
Peng Xiao ◽  
Zhenguo Lin ◽  
Sheng Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Zirconium Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Solution Processed ◽  
Indium Zinc Oxide

Enhanced performance of solution-processed IZO-TFTs with ZrOx interlayer due to Al diffusion suppression.

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

2008 ◽  
Vol 29 (12) ◽  
pp. 1309-1311 ◽  
Author(s):  
Jang Yeon Kwon ◽  
Kyoung Seok Son ◽  
Ji Sim Jung ◽  
Tae Sang Kim ◽  
Myung Kwan Ryu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
High Resolution ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Bottom Gate
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