On-Chip ESD Protection Device for High-Speed I/O Applications in CMOS Technology

2017 ◽  
Vol 64 (10) ◽  
pp. 3979-3985 ◽  
Author(s):  
Jie-Ting Chen ◽  
Chun-Yu Lin ◽  
Ming-Dou Ker
2004 ◽  
Vol 35 (1) ◽  
pp. 404
Author(s):  
Ming-Dou Ker ◽  
Shih-Hung Chen ◽  
Tang-Kui Tseng

Author(s):  
Liang Guang ◽  
Ethiopia Nigussie ◽  
Juha Plosila ◽  
Hannu Tenhunen

Self-aware and adaptive Network-on-Chip (NoC) with dual monitoring networks is presented. Proper monitoring interface is an essential prerequisite to adaptive system reconfiguration in parallel on-chip computing. This work proposes a DMC (dual monitoring communication) architecture to support self-awareness on the NoC platform. One type of monitoring communication is integrated with data channel, in order to trace the run-time profile of data communication in high-speed on-chip networking. The other type is separate from the data communication, and is needed to report the run-time profile to the supervising monitor. Direct latency monitoring on mesochronous NoC is presented as a case study and is directly traced in the integrated communication with a novel latency monitoring table in each router. The latency information is reported by the separate monitoring communication to the supervising monitor, which reconfigures the system to adjust the latency, for instance by dynamic voltage and frequency scaling. With quantitative evaluation using synthetic traces and real applications, the effectiveness and efficiency of direct latency monitoring with DMC architecture is demonstrated. The area overhead of DMC architecture is estimated to be small in 65nm CMOS technology.


2013 ◽  
Vol 22 (08) ◽  
pp. 1350068
Author(s):  
XINSHENG WANG ◽  
YIZHE HU ◽  
LIANG HAN ◽  
JINGHU LI ◽  
CHENXU WANG ◽  
...  

Process and supply variations all have a large influence on current-mode signaling (CMS) circuits, limiting their application on the fields of high-speed low power communication over long on-chip interconnects. A variation-insensitive CMS scheme (CMS-Bias) was offered, employing a particular bias circuit to compensate the effects of variations, and was robust enough against inter-die and intra-die variations. In this paper, we studied in detail the principle of variation tolerance of the CMS circuit and proposed a more suitable bias circuit for it. The CMS-Bias with the proposed bias circuit (CMS-Proposed) can acquire the same variation tolerance but consume less energy, compared with CMS-Bias with the original bias circuit (CMS-Original). Both the CMS schemes were fabricated in 180 nm CMOS technology. Simulation and measured results indicate that the two CMS interconnect circuits have the similar signal propagation delay when driving signal over a 10 mm line, but the CMS-Proposed offers about 9% reduction in energy/bit and 7.2% reduction in energy-delay-product (EDP) over the CMS-Original. Simulation results show that the two CMS schemes only change about 5% in delay when suffering intra-die variations, and have the same robustness against inter-die variations. Both simulation and measurements all show that the proposed bias circuits, employing self-biasing structure, contribute to robustness against supply variations to some extent. Jitter analysis presents the two CMS schemes have the same noise performance.


2009 ◽  
Vol 40 (6) ◽  
pp. 1007-1012 ◽  
Author(s):  
Yongseo Koo ◽  
Kwangyeob Lee ◽  
Kuidong Kim ◽  
Jongki Kwon

Author(s):  
Jie-Ting Chen ◽  
Chun-Yu Lin ◽  
Rong-Kun Chang ◽  
Ming-Dou Ker ◽  
Tzu-Chien Tzeng ◽  
...  

2014 ◽  
Vol 687-691 ◽  
pp. 3251-3254
Author(s):  
Zhuo Tian ◽  
Bai Cheng Li

ComparedtobulkCMOStechnology,Silicon-on-Insulator (SOI) CMOS technology has many advantages, such as low power consumption, low leakage current, low parasitic capacitance and a low soft error rate from both alpha particles and cosmic rays. However,electrostatic discharge (ESD) protection in SOI technology is still a major substantial barrier to overcome for the poor thermal conductivity of isolation oxide and the absence of vertical diode and silicon controlled rectifier (SCR).


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