Design and Characterization of Sloped-Field-Plate Enhanced Trench Edge Termination

2017 ◽  
Vol 64 (3) ◽  
pp. 728-734 ◽  
Author(s):  
Wentao Yang ◽  
Hao Feng ◽  
Xiangming Fang ◽  
Yong Liu ◽  
Yuichi Onozawa ◽  
...  
Keyword(s):  
Field Plate ◽  
Edge Termination

Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices

2019 ◽  
Vol 66 (10) ◽  
pp. 4251-4257 ◽  
Author(s):  
Yong Liu ◽  
Wentao Yang ◽  
Hao Feng ◽  
Linhua Huang ◽  
Yuichi Onozawa ◽  
...  
Keyword(s):  
Plate Edge ◽  
Deep Trench ◽  
Field Plate ◽  
Edge Termination

A Study of Oxide Etch Angle of Edge Termination Field Plate for Fabrication of SiC SBD

2017 ◽  
Vol 730 ◽  
pp. 102-105
Author(s):  
Ey Goo Kang
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Breakdown Voltage ◽  
Dielectric Breakdown ◽  
Power Semiconductor ◽  
Field Plate ◽  
Edge Termination ◽  
Power Semiconductor Devices ◽  
Silicon Materials ◽  
Generation Power

The silicon carbide (SiC) material is being spotlighted as a next-generation power semiconductor material due to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in the conventional power semiconductor devices. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. The experiment results indicated that oxide etch angle was 45° when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681V was obtained.

Design rules for field plate edge termination in SiC Schottky diodes

2001 ◽  
Vol 48 (12) ◽  
pp. 2659-2664 ◽  
Author(s):  
M.C. Tarplee ◽  
V.P. Madangarli ◽  
Quinchun Zhang ◽  
T.S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Design Rules ◽  
Field Plate ◽  
Edge Termination

Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS Diode

2014 ◽  
Vol 778-780 ◽  
pp. 800-803 ◽  
Author(s):  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Rui Li ◽  
Yun Li ◽  
...  
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
Epitaxial Layer ◽  
Doping Level ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Fabrication And Characterization ◽  
Drift Layer

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 μm with a doping of 9×1014cm−3. The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4V at JF=80 A/cm2

Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination

2000 ◽  
Vol 338-342 ◽  
pp. 1223-1226 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
M. Tarplee ◽  
Tangali S. Sudarshan
Keyword(s):  
Schottky Diodes ◽  
Plate Edge ◽  
Current Spreading ◽  
Field Plate ◽  
Edge Termination ◽  
Lateral Current

A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure

2016 ◽  
Vol 37 (4) ◽  
pp. 471-473 ◽  
Author(s):  
Wentao Yang ◽  
Hao Feng ◽  
Xiangming Fang ◽  
Yuichi Onozawa ◽  
Hiroyuki Tanaka ◽  
...  
Keyword(s):  
Short Edge ◽  
Field Plate ◽  
Edge Termination

Simulation research on offset field-plate used as edge termination in 4H–SiC merged PiN-Schottky diodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047305 ◽  
Author(s):  
Chen Feng-Ping ◽  
Zhang Yu-Ming ◽  
Zhang Yi-Men ◽  
Lü Hong-Liang ◽  
Song Qing-Wen
Keyword(s):  
Schottky Diodes ◽  
Simulation Research ◽  
Field Plate ◽  
Edge Termination
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