Modeling of the Lateral Emitter-Current Crowding Effect in SiGe HBTs

2016 ◽  
Vol 63 (11) ◽  
pp. 4160-4166 ◽  
Author(s):  
Shon Yadav ◽  
Anjan Chakravorty ◽  
Michael Schroter
Keyword(s):  
Current Crowding ◽  
Crowding Effect ◽  
Emitter Current

The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors

2002 ◽  
Vol 46 (11) ◽  
pp. 1997-2000 ◽  
Author(s):  
Yuchun Chang ◽  
Guotong Du ◽  
Junfeng Song ◽  
Songxin Wang ◽  
Hailin Luo ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Crowding ◽  
Crowding Effect ◽  
Emitter Current

Effects of ultra-thin Si-fin body widths upon SOI PMOS FinFETs

2018 ◽  
Vol 32 (15) ◽  
pp. 1850157 ◽  
Author(s):  
Yue-Gie Liaw ◽  
Chii-Wen Chen ◽  
Wen-Shiang Liao ◽  
Mu-Chun Wang ◽  
Xuecheng Zou
Keyword(s):  
Gate Oxide ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Current Crowding ◽  
Crowding Effect ◽  
Short Channel ◽  
Channel Mobility ◽  
Channel Effect ◽  
193 Nm ◽  
Dry Etch

Nano-node tri-gate FinFET devices have been developed after integrating a 14 Å nitrided gate oxide upon the silicon-on-insulator (SOI) wafers established on an advanced CMOS logic platform. These vertical double gate (FinFET) devices with ultra-thin silicon fin (Si-fin) widths ranging from 27 nm to 17 nm and gate length down to 30 nm have been successfully developed with a 193 nm scanner lithography tool. Combining the cobalt fully silicidation and the CESL strain technology beneficial for PMOS FinFETs was incorporated into this work. Detailed analyses of [Formula: see text]–[Formula: see text] characteristics, threshold voltage [Formula: see text], and drain-induced barrier lowering (DIBL) illustrate that the thinnest 17 nm Si-fin width FinFET exhibits the best gate controllability due to its better suppression of short channel effect (SCE). However, higher source/drain resistance [Formula: see text], channel mobility degradation due to dry etch steps, or “current crowding effect” will slightly limit its transconductance [Formula: see text] and drive current.

Origin of the longitudinal current crowding effect in high power diode lasers

2021 ◽  
Author(s):  
Paul O. Leisher ◽  
Michelle Labrecque ◽  
Kevin McClune ◽  
Elliot Burke ◽  
Daniel Renner ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Current Crowding ◽  
Crowding Effect ◽  
Longitudinal Current ◽  
Power Diode

Study of Current Crowding Effect and Reliability of LED Devices

2013 ◽  
Vol 34 (8) ◽  
pp. 1051-1056
Author(s):  
吴艳艳 WU Yan-yan ◽  
冯士维 FENG Shi-wei ◽  
乔彦斌 QIAO Yan-bin ◽  
魏光华 WEI Guang-hua ◽  
张建伟 ZHANG Jian-wei
Keyword(s):  
Current Crowding ◽  
Crowding Effect

Analytical method for two dimensional current crowding effect in magnetic tunnel junctions

2002 ◽  
Vol 91 (10) ◽  
pp. 8783 ◽  
Author(s):  
Jian Chen ◽  
Yun Li ◽  
Janusz Nowak ◽  
Juan Fernandez de-Castro
Keyword(s):  
Analytical Method ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Two Dimensional ◽  
Current Crowding ◽  
Crowding Effect
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