Investigation of emitter current crowding effect in heterojunction bipolar transistors

1993 ◽  
Vol 29 (20) ◽  
pp. 1799 ◽  
Author(s):  
V. Fournier ◽  
J. Dangla ◽  
C. Dubon-Chevallier
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Crowding ◽  
Crowding Effect ◽  
Emitter Current

The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors

2002 ◽  
Vol 46 (11) ◽  
pp. 1997-2000 ◽  
Author(s):  
Yuchun Chang ◽  
Guotong Du ◽  
Junfeng Song ◽  
Songxin Wang ◽  
Hailin Luo ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Crowding ◽  
Crowding Effect ◽  
Emitter Current

Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors

2001 ◽  
Vol 37 (6) ◽  
pp. 393 ◽  
Author(s):  
J.J. Huang ◽  
D. Caruth ◽  
M. Feng ◽  
D.J.H. Lambert ◽  
B.S. Shelton ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Emitter Current ◽  
Temperature Study

DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors

2019 ◽  
Vol 153 ◽  
pp. 1-7
Author(s):  
E. Ramirez-Garcia ◽  
E. Garduño-Nolasco ◽  
L.M. Rodríguez-Méndez ◽  
L.M. Diaz-Albarran ◽  
D. Valdez-Perez ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Crowding ◽  
Dc Current

TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS

2004 ◽  
Vol 14 (03) ◽  
pp. 819-824 ◽  
Author(s):  
HUILI G. XING ◽  
UMESH K. MISHRA
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ohmic Contacts ◽  
Voltage Dependence ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Current Crowding ◽  
Temperature Dependent ◽  
Offset Voltage ◽  
Injection Coefficient ◽  
Device Operation

DC I-V characteristics of AlGaN/GaN heterojunction bipolar transistors (HBTs) and GaN homojunction bipolar transistors (BJTs) are analyzed in the temperature range of 200-450 K. At low current levels, the adverse effects of poor ohmic contacts coupled with paths of high leakage make it difficult to extract intrinsic device operation ["Explanation of anomalous current gain observed in GaN based bipolar transistors", Xing et al. IEEE Elect. Dev. Lett. 24(1) 2003:p.4-6]. At intermediate current levels, owing to enhanced ionization of Mg in the base, the HBTs show an increase in current gain resulting from mitigated current crowding, and the BJTs show a decrease in current gain resulting from reduction of emitter injection coefficient. The offset voltage dependence on temperature is also explained.

Modeling of the Lateral Emitter-Current Crowding Effect in SiGe HBTs

2016 ◽  
Vol 63 (11) ◽  
pp. 4160-4166 ◽  
Author(s):  
Shon Yadav ◽  
Anjan Chakravorty ◽  
Michael Schroter
Keyword(s):  
Current Crowding ◽  
Crowding Effect ◽  
Emitter Current
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