Modeling and Analysis of Lifetime Curve of Amorphous Silicon/Crystalline Silicon Heterostructure Solar Cell

2016 ◽  
Vol 63 (10) ◽  
pp. 3996-4002 ◽  
Author(s):  
Sukanta Dhar ◽  
Chandan Banerjee ◽  
Hiranmay Saha ◽  
Kunal Ghosh
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Modeling And Analysis ◽  
Lifetime Curve

scholarly journals Capacitance Analysis of the Structures with the a-Si:H(i)/c-Si(p) Heterojunction for Solar-Cell Applications

2014 ◽  
Vol 65 (4) ◽  
pp. 254-258 ◽  
Author(s):  
Miroslav Mikolášek ◽  
Ján Jakaboviš ◽  
Vlastimil Řeháček ◽  
Ladislav Harmatha ◽  
Robert Andok
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Band Offset ◽  
Defect States ◽  
Conduction Band Offset ◽  
Silicon Heterojunction Solar Cell ◽  
Density Of Defect States ◽  
Passivated Silicon

Abstract In this paper we present the capacitance study of the intrinsic amorphous silicon/crystalline silicon heterostructure with the aim to gain insight on the heterointerface properties of a passivated silicon heterojunction solar cell. It is shown that due to the high density of defect states in the amorphous layer the structure has to be analyzed as a heterojunction. Using the analysis, the following values have been determined: conduction-band offset of 0.13 eV, electron affinity of 3.92 eV, and density of defect states in the intrinsic amorphous silicon being that of 4.14 X 1021m—3.

scholarly journals Measurements and Simulations on the Mechanisms of Efficiency Losses in HIT Solar Cells

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Silvio Pierro ◽  
Andrea Scuto ◽  
Luca Valenti ◽  
Marina Foti ◽  
Anna Battaglia ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Solar Cell ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Crystalline Silicon Solar Cell ◽  
Optical Efficiency ◽  
Efficiency Losses ◽  
Optical Behavior ◽  
Tcad Simulations

We study the electrical and the optical behavior of HIT solar cell by means of measurements and optoelectrical simulations by TCAD simulations. We compare the HIT solar cell with a conventional crystalline silicon solar cell to identify the strengths and weaknesses of the HIT technology. Results highlight different mechanisms of electrical and optical efficiency losses caused by the presence of the amorphous silicon layer. The higher resistivity of the a-Si layers implies a smaller distance between the metal lines that causes a higher shadowing. The worst optical coupling between the amorphous silicon and the antireflective coating implies a slight increase of reflectivity around the 600 nm wavelength.

scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

Effects of Operating Temperature on the Performance of c-Si, a-Si:H, CIGS, and CdTe/CdS Based Solar Cells

2020 ◽  
Vol 1 (1) ◽  
pp. 31-37
Author(s):  
Ahnaf Shahriar ◽  
◽  
Saif Hasnath ◽  
Md. Aminul Islam
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Operating Temperature ◽  
Comparative Investigation ◽  
Simulation Software ◽  
Rate Of Change ◽  
Green Technologies ◽  
Operation Temperature

Solar photovoltaic technology is one of the most promising, economical and green technologies to harvest energy with the least effect on the environment. Crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, CdTe/CdS etc., are dominating the PV market. Operating temperature plays an important role in the performance of solar cells. A comparative investigation on the effect of operating temperature on the market available solar cells is very important in choosing the better PV technology in high-temperature applications. In this study, the performances of different solar cell technologies, namely crystalline silicon (c-Si), amorphous silicon (a-Si), CIGS, and CdTe/CdS based solar cells, have been investigated under different operating temperature by using SCAPS-1D simulation software. All parameter of a solar cell for different technology has been studied under the varying operation temperature ranging from 25 ºC to 70 ºC and the rate of change of them has been recorded. It has been found that the Voc and Pmax degrade significantly and Isc increases slightly with an increase in temperature. The temperature coefficients of Pmax for c-Si, a-Si, CdTe and CIGS have been found as -0.0724/K, -0.0362/K, -0.0112/K and -0.0663/K, respectively. On the other hand, c-Si and CIGS technologies show better quantum efficiency behaviour in both room and high operating temperatures.

Optoelectronic Properties of Thin Amorphous and Micro-Crystalline p-Type Films Developed for Amorphous Silicon-Based Solar Cells

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Winz ◽  
B. Rech ◽  
T. H. Eickhoff ◽  
C. Beneking ◽  
C. M. Fortmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Glass Substrates ◽  
Cell Structures ◽  
Silicon Carbon ◽  
P Type

AbstractVIIF-PECVD at 110 MI-z was used to deposit micro-crystalline p-layers on glass substrates for detailed analysis and onto ZnO coated substrates for incorporation into p-i-n solar cell structures. Solar cell and film analysis confirmed that the films incorporated into the solar cells contained significant crystalline silicon volume fractions despite being only 30 nm thick. The p-i-n solar cells employing a micro-crystalline silicon p-layer deposited on ZnO coated substrates had series resistances, fill factors and Voc similar to those of the reference solar cells deposited onto SnO2 coated substrates and having optimized amorphous silicon-carbon p-layers. The short circuit current of the micro-crystalline p-layer case was 10 percent lower than that of the reference cell indicating that further optimization is required.

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