Experimental Benchmarking of Electrical Methods and $\mu $ -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

2016 ◽  
Vol 63 (6) ◽  
pp. 2321-2327 ◽  
Author(s):  
Vice Sodan ◽  
Daisuke Kosemura ◽  
Steve Stoffels ◽  
Herman Oprins ◽  
Martine Baelmans ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Detection ◽  
Channel Temperature ◽  
Electrical Methods ◽  
Gan Hemts

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

2008 ◽  
Vol 55 (2) ◽  
pp. 478-482 ◽  
Author(s):  
Richard J. T. Simms ◽  
James W. Pomeroy ◽  
Michael J. Uren ◽  
Trevor Martin ◽  
Martin Kuball
Keyword(s):  
Raman Spectroscopy ◽  
High Power ◽  
Temperature Determination ◽  
Channel Temperature ◽  
Electrical Methods

Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

2011 ◽  
Vol 28 (1) ◽  
pp. 017201 ◽  
Author(s):  
Guang-Chen Zhang ◽  
Shi-Wei Feng ◽  
Pei-Feng Hu ◽  
Yan Zhao ◽  
Chun-Sheng Guo ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Channel Temperature ◽  
Gan Hemts

Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I — V Characteristics

2012 ◽  
Vol 29 (8) ◽  
pp. 087203 ◽  
Author(s):  
Jian-Hui Wang ◽  
Xin-Hua Wang ◽  
Lei Pang ◽  
Xiao-Juan Chen ◽  
Zhi Jin ◽  
...  
Keyword(s):  
Channel Temperature ◽  
Gan Hemts

scholarly journals Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 76
Author(s):  
Huaixin Guo ◽  
Tangsheng Chen ◽  
Shang Shi
Keyword(s):  
Power Density ◽  
Power Amplifiers ◽  
Pulse Width ◽  
Thermal Response ◽  
Thermal Design ◽  
Transient Simulation ◽  
Gate Width ◽  
Channel Temperature ◽  
Gan Hemts ◽  
Transient Thermal

The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. To improve the calculation accuracy, the nonlinear thermal conductivities and near-junction region of GaN chip are considered and treated appropriately in our numerical analysis. The periodic transient pulses temperature and temperature distribution are analyzed to estimate thermal response when GaN amplifiers are operating in pulsed mode with kilowatt-level power, and the relationships between channel temperatures and pulse width, gate structures, and power density of GaN device are analyzed. Results indicate that the maximal channel temperature and thermal impedance of device are considerably influenced by pulse width and power density effects, but the changes of gate fingers and gate width have no effect on channel temperature when the total gate width and active area are kept constant. Finally, the transient thermal response of GaN amplifier is measured using IR thermal photogrammetry, and the correctness and validation of the simulation model is verified. The study of transient simulation is demonstrated necessary for optimal designs of pulse-operated AlGaN/GaN HEMTs.

Simple and Accurate Method to Estimate Channel Temperature and Thermal Resistance in AlGaN/GaN HEMTs

2013 ◽  
Vol 60 (12) ◽  
pp. 4105-4111 ◽  
Author(s):  
Sara Martin-Horcajo ◽  
Ashu Wang ◽  
Maria-Fatima Romero ◽  
Marko Jak Tadjer ◽  
Fernando Calle
Keyword(s):  
Thermal Resistance ◽  
Accurate Method ◽  
Channel Temperature ◽  
Gan Hemts
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