Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

2008 ◽  
Vol 55 (2) ◽  
pp. 478-482 ◽  
Author(s):  
Richard J. T. Simms ◽  
James W. Pomeroy ◽  
Michael J. Uren ◽  
Trevor Martin ◽  
Martin Kuball
Keyword(s):  
Raman Spectroscopy ◽  
High Power ◽  
Temperature Determination ◽  
Channel Temperature ◽  
Electrical Methods

Experimental Benchmarking of Electrical Methods and $\mu $ -Raman Spectroscopy for Channel Temperature Detection in AlGaN/GaN HEMTs

2016 ◽  
Vol 63 (6) ◽  
pp. 2321-2327 ◽  
Author(s):  
Vice Sodan ◽  
Daisuke Kosemura ◽  
Steve Stoffels ◽  
Herman Oprins ◽  
Martine Baelmans ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Detection ◽  
Channel Temperature ◽  
Electrical Methods ◽  
Gan Hemts

A Study for N2 Coherent Anti-Stokes Raman Spectroscopy Thermometry at High Pressure

1983 ◽  
Vol 37 (6) ◽  
pp. 508-512 ◽  
Author(s):  
Haruhiko Kataoka ◽  
Shiro Maeda ◽  
Chiaki Hirose ◽  
Koichi Kajiyama
Keyword(s):  
Raman Spectroscopy ◽  
High Pressure ◽  
High Temperature ◽  
Pressure Range ◽  
High Pressures ◽  
Band Width ◽  
Maximum Height ◽  
Temperature Determination ◽  
Engine Cylinder ◽  
Anti Stokes

N2 coherent anti-Stokes Raman spectroscopy (CARS) thermometry over a pressure range 1 to 50 atm has been studied. The CARS profile at high pressure and high temperature was recorded by using the ignition inside a running engine cylinder. The observed Q-branch profile was theoretically fitted by incorporating the collisional narrowing effect, serving for the temperature determination at various pressures. Because of the narrowing effect, the apparent band width showed little change with pressure above 5 atm in general. It has been suggested that the band width at 1/5 of the maximum height can be a useful measure of temperature, while the usual half-width turns out to be hardly practicable at high pressures.

Broadband D_2 coherent anti-Stokes Raman spectroscopy for single-shot pressure and temperature determination with a Fabry–Perot etalon

1999 ◽  
Vol 38 (3) ◽  
pp. 534 ◽  
Author(s):  
Walter D. Gillespie ◽  
Jae Won Hahn ◽  
Walter J. Bowers ◽  
Wilbur S. Hurst ◽  
Gregory J. Rosasco
Keyword(s):  
Raman Spectroscopy ◽  
Single Shot ◽  
Temperature Determination ◽  
Fabry Perot ◽  
Anti Stokes

scholarly journals Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material

2020 ◽  
Vol 70 (5) ◽  
pp. 511-514
Author(s):  
Subhash Chander ◽  
Partap Singh ◽  
Samuder Gupta ◽  
D. S. Rawal ◽  
Mridula Gupta
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Self Heating ◽  
Channel Temperature ◽  
Passivation Layers ◽  
Different Temperatures ◽  
Output Characteristics

In this paper effect of self-heating has been studied of AlGaN/GaN high electron mobility transistor (HEMT) for different passivation layers which is promising device for high power at high frequencies. The different passivation layers used are aluminium oxide (Al2O3), silicon nitride (SiN) and silicon dioxide (SiO2). The device GaN HEMT has been simulated and characterised for its thermal behaviour by the distribution of lattice temperature inside the device using device simulation tool ATLAS from SILVACO. The transfer and output characteristics with and without self-heating has been studied for electrical characterisation. The channel temperature for different passivation observed is 448 K, 456 K and 471 K forAl2O3, SiN and SiO2 respectively. The observed different temperatures are due to difference in their thermal conductivity. This channel temperature information is critical to study the reliability of the device at high power levels.

Temperature determination of superheated water vapor by rotational-vibrational Raman spectroscopy

2018 ◽  
Vol 43 (18) ◽  
pp. 4477 ◽  
Author(s):  
Leo A. Bahr ◽  
Peter Fendt ◽  
Yin Pang ◽  
Jürgen Karl ◽  
Thomas Hammer ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Water Vapor ◽  
Superheated Water ◽  
Temperature Determination

Local temperature determination in power loaded surface acoustic wave structures using Raman spectroscopy

2013 ◽  
Vol 114 (16) ◽  
pp. 164317 ◽  
Author(s):  
M. Spindler ◽  
B. Uhlig ◽  
S. B. Menzel ◽  
C. Huck ◽  
T. Gemming ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Local Temperature ◽  
Temperature Determination ◽  
Loaded Surface

AlGaN/GaN HEMT channel temperature determination utilizing external heater

2019 ◽  
Vol 35 (2) ◽  
pp. 025006
Author(s):  
M Florovič ◽  
R Szobolovszký ◽  
J Kováč ◽  
J Kováč ◽  
A Chvála ◽  
...  
Keyword(s):  
Temperature Determination ◽  
Gan Hemt ◽  
Channel Temperature

Tip-enhanced THz Raman spectroscopy for local temperature determination at the nanoscale

2015 ◽  
Vol 407 (27) ◽  
pp. 8205-8213 ◽  
Author(s):  
Maria Vanessa Balois ◽  
Norihiko Hayazawa ◽  
Francesca Celine Catalan ◽  
Satoshi Kawata ◽  
Taka-aki Yano ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Local Temperature ◽  
Temperature Determination
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