Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices

2016 ◽  
Vol 63 (4) ◽  
pp. 1630-1636 ◽  
Author(s):  
Woongje Sung ◽  
B. Jayant Baliga ◽  
Alex Q. Huang
Keyword(s):  
High Voltage ◽  
Edge Termination ◽  
Bevel Edge ◽  
Area Efficient

Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination

2021 ◽  
Author(s):  
Ke Zeng ◽  
Srabanti Chowdhury ◽  
Brendan Gunning ◽  
Robert Kaplar ◽  
Travis Anderson
Keyword(s):  
Pin Diode ◽  
Edge Termination ◽  
Bevel Edge

Electromagnetic Analysis of the Bevel Edge Technique in High Voltage Shunt Reactors

2021 ◽  
Author(s):  
Salvador Magdaleno-Adame ◽  
Rodrigo Ocon-Valdez ◽  
David Juarez-Aguilar ◽  
Elizabeth Cortina-Gonzalez ◽  
Juan C. Olivares-Galvan
Keyword(s):  
High Voltage ◽  
Electromagnetic Analysis ◽  
Bevel Edge ◽  
Shunt Reactors

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

2020 ◽  
Vol 67 (7) ◽  
pp. 2850-2853
Author(s):  
Takashi Hirao ◽  
Hidekatsu Onose ◽  
Kan Yasui ◽  
Mutsuhiro Mori
Keyword(s):  
Surface Charge ◽  
High Voltage ◽  
Power Devices ◽  
Edge Termination

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

2020 ◽  
Vol 54 (2) ◽  
pp. 258-262 ◽  
Author(s):  
N. M. Lebedeva ◽  
N. D. Il’inskaya ◽  
P. A. Ivanov
Keyword(s):  
High Voltage ◽  
Mesa Structure ◽  
Edge Termination

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

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