LPT(II)-CSTBT™(III) for High Voltage application with ultra robust turn-off capability utilizing novel edge termination design

2012 ◽  
Author(s):  
Ze Chen ◽  
Katsumi Nakamura ◽  
Tomohide Terashima
Keyword(s):  
High Voltage ◽  
Edge Termination ◽  
Voltage Application

Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices

2020 ◽  
Vol 67 (7) ◽  
pp. 2850-2853
Author(s):  
Takashi Hirao ◽  
Hidekatsu Onose ◽  
Kan Yasui ◽  
Mutsuhiro Mori
Keyword(s):  
Surface Charge ◽  
High Voltage ◽  
Power Devices ◽  
Edge Termination

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling

2020 ◽  
Vol 54 (2) ◽  
pp. 258-262 ◽  
Author(s):  
N. M. Lebedeva ◽  
N. D. Il’inskaya ◽  
P. A. Ivanov
Keyword(s):  
High Voltage ◽  
Mesa Structure ◽  
Edge Termination
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