Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
2015 ◽
Vol 62
(11)
◽
pp. 3653-3657
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Keyword(s):
1993 ◽
Vol 32
(Part 1, No. 1B)
◽
pp. 462-468
◽
2020 ◽
Vol 41
(6)
◽
pp. 856-859
◽
2014 ◽
Vol 35
(11)
◽
pp. 1103-1105
◽
Keyword(s):
1992 ◽