scholarly journals High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Peng Xiao ◽  
Ting Dong ◽  
Linfeng Lan ◽  
Zhenguo Lin ◽  
Wei Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Dc Sputtering

High Mobility Field-Effect Thin Film Transistor Using Room-Temperature High-$\kappa$ Gate Dielectrics

2014 ◽  
Vol 10 (10) ◽  
pp. 875-881 ◽  
Author(s):  
Hsiao-Hsuan Hsu ◽  
Chun-Yen Chang ◽  
Chun-Hu Cheng ◽  
Po-Chun Chen ◽  
Yu-Chien Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Room Temperature ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
High Mobility

Room-temperature flexible thin film transistor with high mobility

2013 ◽  
Vol 13 (7) ◽  
pp. 1459-1462 ◽  
Author(s):  
Hsiao-Hsuan Hsu ◽  
Chun-Yen Chang ◽  
Chun-Hu Cheng
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility

High Mobility ZnO Thin-film Transistor Fabricated by Sputtering at Room Temperature

2017 ◽  
Vol 38 (7) ◽  
pp. 917-922
Author(s):  
刘玉荣 LIU Yu-rong ◽  
黄荷 HUANG He ◽  
刘杰 LIU Jie
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Zno Thin Film

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

2006 ◽  
Vol 89 (11) ◽  
pp. 112123 ◽  
Author(s):  
Hisato Yabuta ◽  
Masafumi Sano ◽  
Katsumi Abe ◽  
Toshiaki Aiba ◽  
Tohru Den ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Rf Magnetron Sputtering

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

2015 ◽  
Vol 1731 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Koji Abe ◽  
Hirobumi Ushijima
Keyword(s):  
Thin Film ◽  
Organic Solvents ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Precursor Solution ◽  
Drying Process ◽  
Minor Variation ◽  
Drying Temperature ◽  
Metal Nitrates

ABSTRACTWe have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by mixing of metal nitrates and two kinds of organic solvents, 2-methoxyethanol (2ME) and 2,2,2-trifluoroethanol (TFE). 2ME was used for dissolving metal nitrates. TFE was added as a solvent for reducing surface tension as small as possible, leading to improvement of the wettability of the precursor solution on the surface of the substrate. In order to discuss the relationship between morphology and drying process, the spin-coated IGZO-precursor films were dried at room temperature and 140 °C on a hotplate, respectively. Annealing of the both films was carried out at 300 °C in an electric oven for 60 min after each drying process. Drying at room temperature provides a discontinuous film, resulting in a large variation of the TFT performance. On the other hand, drying at 140 °C provides a continuous film, resulting in the higher TFT performance and a minor variation. The difference in surface morphologies would be derived from the evaporation rate of the organic solvents. The rapid evaporation at 140 °C brings about rapid pinning of the spin-coated precursor layer on the substrate. Preparation process via the drying at 140 °C gave ∼ 1 cm2 V-1 s-1 of the saturated mobility, quite small hysteresis, and 107∼ 108 of the on-off ratio.

Formaldehyde Detection Based on P3HT/InSnO Composite Thin Film Transistor

2014 ◽  
Vol 875-877 ◽  
pp. 82-86
Author(s):  
Xian Li ◽  
Ya Dong Jiang ◽  
Hui Ling Tai ◽  
Guang Zhong Xie ◽  
Wen Chao Dan
Keyword(s):  
Thin Film ◽  
Composite Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Organic Thin Film Transistors ◽  
Composite Thin Film ◽  
Organic Thin Film ◽  
Response And Recovery

Formaldehyde, a colorless and pungent-smelling gas, had been confirmed be a huge threat to people health. The detection of formaldehyde was necessary and important at room temperature. Sprayed P3HT/InSnO composite film based on organic thin film transistors (OTFT) was fabricated to detect formaldehyde at room temperature in this paper. The results showed that P3HT/ InSnO-OTFT showed better response and recovery to HCHO compared with P3HT-OTFT at room temperature.

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