Impact of Thermoelectric Effects on Phase Change Memory Characteristics

2015 ◽  
Vol 62 (10) ◽  
pp. 3264-3271 ◽  
Author(s):  
Nicola Ciocchini ◽  
Mario Laudato ◽  
Antonio Leone ◽  
Paolo Fantini ◽  
Andrea L. Lacaita ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Thermoelectric Effects ◽  
Memory Characteristics ◽  
Change Memory

Numerical Modeling of Thermoelectric Thomson Effect in Phase Change Memory Bridge Structures

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450004 ◽  
Author(s):  
Faruk Dirisaglik ◽  
Gokhan Bakan ◽  
Azer Faraclas ◽  
Ali Gokirmak ◽  
Helena Silva
Keyword(s):  
Numerical Modeling ◽  
Phase Change ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Thermoelectric Effects ◽  
Non Volatile Memory ◽  
Bridge Structures ◽  
P Type ◽  
Electrothermal Effects ◽  
Change Memory

Phase change memory is a non-volatile memory technology that utilizes the electrical resistivity contrast between resistive amorphous and conductive crystalline phases of phase change materials. These devices operate at high current densities and high temperature gradients which lead to significant thermoelectric effects. We have performed numerical modeling of electrothermal effects in p-type Ge2Sb2Te5 phase change memory structures suspended on TiN contact pads using COMSOL Multiphysics. Temperature dependent material parameters are used in the model. Strong asymmetry is observed in temperature profiles in all cases: the hottest spot appears closer to the higher potential end suggesting that the thermal profile can be significantly altered by the thermoelectric effects during device operation. Hence, thermoelectric effects need to be considered for device designs for lower power and higher reliability devices.

Thermoelectric Characterization of Ge2Sb2Te5 Films for Phase-Change Memory

2012 ◽  
Author(s):  
Jaeho Lee ◽  
Takashi Kodama ◽  
Yoonjin Won ◽  
Mehdi Asheghi ◽  
Kenneth E. Goodson
Keyword(s):  
Seebeck Coefficient ◽  
Phase Change ◽  
Thermoelectric Properties ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Film Structure ◽  
Thermoelectric Effects ◽  
Crystallization Effect ◽  
Change Memory

While thermoelectric effects can strongly influence the performance of phase-change memory (PCM), the thermoelectric properties of phase-change materials for thin film structure have received little attention. This work reports the temperature and phase dependent Seebeck coefficient of 25 nm and 125 nm thick Ge2Sb2Te5 (GST) films. The Seebeck coefficient of crystalline GST films varies strongly with film thickness, due to changes in crystallization effect and grain boundary scattering. Electrothermal simulations demonstrate that the measured thermoelectric properties can strongly influence the temperature distribution and figures of merit for PCM devices. These data will facilitate cell optimization of novel phase-change memories.

Modeling of Thermoelectric Effects in Phase Change Memory Cells

2014 ◽  
Vol 61 (2) ◽  
pp. 372-378 ◽  
Author(s):  
Azer Faraclas ◽  
Gokhan Bakan ◽  
L'Hacene Adnane ◽  
Faruk Dirisaglik ◽  
Nicholas E. Williams ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cells ◽  
Thermoelectric Effects ◽  
Change Memory

Understanding Overreset Transition in Phase-Change Memory Characteristics

2012 ◽  
Vol 33 (9) ◽  
pp. 1267-1269 ◽  
Author(s):  
A. Calderoni ◽  
M. Ferro ◽  
E. Varesi ◽  
P. Fantini ◽  
M. Rizzi ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Characteristics ◽  
Change Memory

scholarly journals Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory Cells

2018 ◽  
Vol 8 (8) ◽  
pp. 1238 ◽  
Author(s):  
Changcheng Ma ◽  
Jing He ◽  
Jingjing Lu ◽  
Jie Zhu ◽  
Zuoqi Hu
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Phase Change Memory ◽  
Peltier Effect ◽  
Temperature Profiles ◽  
Thermoelectric Effects ◽  
Heating Efficiency ◽  
The Impact ◽  
Change Material ◽  
Change Memory

Phase change memory (PCM) is an important element in the development and realization of new forms of brain-like computing. In this article, a three-dimensional finite element method simulation is carried out to study the temperature profiles within PCM cells for a better understanding of switching operations. On the basis of a finite difference method, the simulation consists of phase transition kinetics, electrical, thermal, percolation effect, as well as thermoelectric effects, using temperature-dependent material parameters. The Thomson effect within the phase-change material and the Peltier effect at the electrode contact are respectively considered for a detailed analysis of the impact on the temperature profiles and the programming current for switching processes. The simulation results show that switching operations are primarily implemented by the melting and quenching of the phase-change material close to the contact between the bottom electrode and phase change material, and its final phase distribution is determined by the cooling rate. With positive current polarity, thermoelectric effects improve heating efficiency and then reduce the programming current. Because of the different occurrence region, the Peltier effect significantly changes the temperature profile, which is more influential in switching operations. Additionally, the contribution of thermoelectric effects decreases with the cell size scaling because of the weakening of the Peltier effect. This paper aims at providing a more precise description of the thermoelectric phenomena taking place in switching operations for future PCM design.

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