Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling

2007 ◽  
Vol 91 (23) ◽  
pp. 233506 ◽  
Author(s):  
Joy Sarkar ◽  
Bob Gleixner
Keyword(s):  
Phase Change ◽  
Physical Modeling ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Operating Cycles ◽  
Memory Characteristics ◽  
Change Memory

Impact of Thermoelectric Effects on Phase Change Memory Characteristics

2015 ◽  
Vol 62 (10) ◽  
pp. 3264-3271 ◽  
Author(s):  
Nicola Ciocchini ◽  
Mario Laudato ◽  
Antonio Leone ◽  
Paolo Fantini ◽  
Andrea L. Lacaita ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Thermoelectric Effects ◽  
Memory Characteristics ◽  
Change Memory

Electrical characterization of anomalous cells in phase change memory arrays

2006 ◽  
Author(s):  
D. Mantegazza ◽  
D. Ielmini ◽  
A. Pirovano ◽  
B. Gleixner ◽  
A. L. Lacaita ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Memory Arrays ◽  
Change Memory

Energy landscape models for conduction and drift in phase change memory

2011 ◽  
Vol 1338 ◽  
Author(s):  
D. Ielmini ◽  
D. Fugazza ◽  
M. Boniardi
Keyword(s):  
Phase Change ◽  
Physical Modeling ◽  
Carrier Transport ◽  
Energy Landscape ◽  
Phase Change Memory ◽  
Analytical Models ◽  
Structure Relaxation ◽  
Amorphous Chalcogenide ◽  
Landscape Models ◽  
Change Memory

ABSTRACTThe physical modeling of carrier conduction and material-related effects such as crystallization, structural relaxation (SR), electromigration and ion migration in chalcogenide materials is a key challenge toward the development and scaling of phase change memory (PCM) devices. In particular, future scaling to 10 nm and below may require addressing variability effects in the programming, switching and retention properties of the cell. Variability is deeply linked with the nanometer-scale fluctuations of potential, atomic structure and material composition that affect conduction, structure relaxation and crystallization. Therefore, the physical modeling of conduction and reliability in PCM devices requires energy landscape models, describing the random fluctuations of e.g. the potential energy dictating the carrier transport and the free energy controlling the atomic rearrangement of the amorphous chalcogenide structure. This work discusses energy landscape models for a physical description of (i) electrical conduction in the amorphous phase and (ii) SR responsible for resistance drift in the amorphous chalcogenide phase. The link between the effective energy barrier in conduction and relaxation will be clarified, and analytical models for the prediction of drift depending on time and temperature will be introduced. These models provide the first comprehensive approach for a physics-based prediction of resistance window, resistance drift and their corresponding statistical variability within large PCM arrays.

Understanding Overreset Transition in Phase-Change Memory Characteristics

2012 ◽  
Vol 33 (9) ◽  
pp. 1267-1269 ◽  
Author(s):  
A. Calderoni ◽  
M. Ferro ◽  
E. Varesi ◽  
P. Fantini ◽  
M. Rizzi ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Characteristics ◽  
Change Memory

Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells†

2009 ◽  
Vol 54 (6) ◽  
pp. 1698-1701 ◽  
Author(s):  
Roberto Fallica ◽  
Jean-Luc Battaglia ◽  
Simone Cocco ◽  
Cristiano Monguzzi ◽  
Andrew Teren ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Memory Cells ◽  
Characterization Of Materials ◽  
Change Memory

Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films

2007 ◽  
Vol 46 (11) ◽  
pp. 7225-7231 ◽  
Author(s):  
Sung-Min Yoon ◽  
Kyu-Jeong Choi ◽  
Nam-Yeal Lee ◽  
Seung-Yun Lee ◽  
Young-Sam Park ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Electrical Characterization ◽  
Memory Devices ◽  
Alloy Films ◽  
Change Memory
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